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MMBF4416LT1_06 Datasheet, PDF (2/6 Pages) ON Semiconductor – JFET VHF/UHF Amplifier Transistor N-Channel
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MMBF4416LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Gate−Source Breakdown Voltage (IG = 1.0 mAdc, VDS = 0)
Gate Reverse Current
(VGS = 20 Vdc, VDS = 0)
(VGS = 20 Vdc, VDS = 0, TA = 150°C)
Gate Source Cutoff Voltage (ID = 1.0 nAdc, VDS = 15 Vdc)
Gate Source Voltage (ID = 0.5 mAdc, VDS = 15 Vdc)
ON CHARACTERISTICS
Zero−Gate−Voltage Drain Current (VGS = 15 Vdc, VGS = 0)
Gate−Source Forward Voltage (IG = 1.0 mAdc, VDS = 0)
SMALL− SIGNAL CHARACTERISTICS
Forward Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 10 MHz)
Output Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Symbol
Min
Max
Unit
V(BR)GSS
IGSS
VGS(off)
VGS
30
−
−
−
− 1.0
−
1.0
200
− 6.0
− 5.5
Vdc
nAdc
Vdc
Vdc
IDSS
VGS(f)
5.0
15
mAdc
−
1.0
Vdc
|Yfs|
|yos|
Ciss
Crss
Coss
4500
−
−
−
−
7500
50
4.0
0.8
2.0
mmhos
mmhos
pF
pF
pF
30
20
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
10
COMMON SOURCE CHARACTERISTICS ADMITTANCE PARAMETERS
(VDS = 15 Vdc, Tchannel = 25°C)
5.0
3.0
bis @ IDSS
2.0
1.0
0.7
gis @ IDSS
0.5
0.3
gis @ 0.25 IDSS
0.2
brs @ IDSS
0.25 IDSS
bis @ 0.25 IDSS
20 30 50 70 100 200 300 500 700 1000
f, FREQUENCY (MHz)
Figure 1. Input Admittance (yis)
0.1
0.07
0.05
10
grs @ IDSS, 0.25 IDSS
20 30 50 70 100 200 300 500 700 1000
f, FREQUENCY (MHz)
Figure 2. Reverse Transfer Admittance (yrs)
20
10
7.0
gfs @ IDSS
5.0
3.0
gfs @ 0.25 IDSS
2.0
1.0
0.7
0.5
0.3
0.2
10
|bfs| @ IDSS
|bfs| @ 0.25 IDSS
20 30 50 70 100
200 300 500 700 1000
f, FREQUENCY (MHz)
Figure 3. Forward Transadmittance (yfs)
10
5.0
2.0
1.0
0.5
0.2
0.1
0.05
0.02
0.01
10
bos @ IDSS and 0.25 IDSS
gos @ IDSS
gos @ 0.25 IDSS
20 30 50 70 100 200 300 500 700 1000
f, FREQUENCY (MHz)
Figure 4. Output Admittance (yos)
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