MMBF2202PT1 Datasheet, PDF (2/6 Pages) Motorola, Inc – P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET

MMBF2202PT1
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(V_GS = 0 Vdc, I_D = 10 µA)
Zero Gate Voltage Drain Current
(V_DS = 16 Vdc, V_GS = 0 Vdc)
(V_DS = 16 Vdc, V_GS = 0 Vdc, T_J = 125°C)
Gate−Body Leakage Current (V_GS = ± 20 Vdc, V_DS = 0)
ON CHARACTERISTICS (Note 2.)
Gate Threshold Voltage
(V_DS = V_GS, I_D = 250 µAdc)
Static Drain−to−Source On−Resistance
(V_GS = 10 Vdc, I_D = 200 mAdc)
(V_GS = 4.5 Vdc, I_D = 50 mAdc)
Forward Transconductance (V_DS = 10 Vdc, I_D = 200 mAdc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(V_DS = 5.0 V)
(V_DS = 5.0 V)
Transfer Capacitance
(V_DG = 5.0 V)
V_(BR)DSS
20
I_DSS
−
−
I_GSS
−
V_GS(th)
1.0
r_DS(on)
−
−
g_FS
−
C_iss
−
C_oss
−
C_rss
−
SWITCHING CHARACTERISTICS (Note 3.)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(V_DD = −15 Vdc,
R_L = 75 Ω, I_D = 200 mAdc,
V_GEN = −10 V, R_G = 6.0 Ω)
Gate Charge (See Figure 5)
(V_DS = 16 V, V_GS = 10 V,
I_D = 200 mA)
t_d(on)
−
t_r
−
t_d(off)
−
t_f
−
Q_T
−
SOURCE−DRAIN DIODE CHARACTERISTICS
Continuous Current
I_S
−
Pulsed Current
I_SM
−
Forward Voltage (Note 3.)
V_SD
−
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.
Typ
Max
Unit
−
−
Vdc
µAdc
−
1.0
−
10
−
±100
nAdc
1.7
2.4
Vdc
Ohms
1.5
2.2
2.0
3.5
600
−
mMhos
50
−
pF
45
−
20
−
2.5
−
ns
1.0
−
16
−
8.0
−
2700
−
pC
−
0.3
A
−
0.75
1.5
−
V
TYPICAL CHARACTERISTICS
10
8
I_D = 200 mA
6
4
2
0
01
234 56 78
V_GS, GATE−SOURCE VOLTAGE (VOLTS)
9 10
Figure 1. On Resistance versus Gate−Source Voltage
4.0
3.5
V_GS = 4.5 V
3.0
I_D = 50 mA
2.5
2.0
1.5
V_GS = 10 V
I_D = 200 mA
1.0
0.5
0
−40 −20 0 20 40 60 80 100 120 140 160
TEMPERATURE (°C)
Figure 2. On Resistance versus Temperature
http://onsemi.com
2