MMBF2201NT1_06 Datasheet, PDF (2/4 Pages) ON Semiconductor – Power MOSFET 300 mAmps, 20 Volts N-Channel SC-70/SOT-323

MMBF2201NT1
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(V_GS = 0 Vdc, I_D = 10 mA)
Zero Gate Voltage Drain Current
(V_DS = 16 Vdc, V_GS = 0 Vdc)
(V_DS = 16 Vdc, V_GS = 0 Vdc, T_J = 125°C)
Gate−Body Leakage Current (V_GS = ± 20 Vdc, V_DS = 0)
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
(V_DS = V_GS, I_D = 250 mAdc)
Static Drain−to−Source On−Resistance
(V_GS = 10 Vdc, I_D = 300 mAdc)
(V_GS = 4.5 Vdc, I_D = 100 mAdc)
Forward Transconductance (V_DS = 10 Vdc, I_D = 200 mAdc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(V_DS = 5.0 V)
(V_DS = 5.0 V)
Transfer Capacitance
(V_DG = 5.0 V)
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(V_DD = 15 Vdc, I_D = 300 mAdc,
R_L = 50 W)
Fall Time
Gate Charge (See Figure 5)
SOURCE−DRAIN DIODE CHARACTERISTICS
Continuous Current
Pulsed Current
Forward Voltage (Note 3)
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.
Symbol
V_(BR)DSS
I_DSS
I_GSS
V_GS(th)
r_DS(on)
g_FS
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
Q_T
I_S
I_SM
V_SD
Min
Typ
Max
Unit
20
−
−
Vdc
mAdc
−
−
1.0
−
−
10
−
−
±100
nAdc
1.0
1.7
2.4
Vdc
W
−
0.75
1.0
−
1.0
1.4
−
450
−
mMhos
−
45
−
pF
−
25
−
−
5.0
−
−
2.5
−
ns
−
2.5
−
−
15
−
−
0.8
−
−
1400
−
pC
−
−
0.3
A
−
−
0.75
−
0.85
−
V
TYPICAL CHARACTERISTICS
1.0
0.9
0.8
V_GS = 4 V
0.7
0.6
0.5
V_GS = 3.5 V
0.4
0.3
V_GS = 3 V
0.2
0.1
V_GS = 2.5 V
0
0 1 2 3 4 5 6 7 8 9 10
V_DS, DRAIN−SOURCE VOLTAGE (VOLTS)
Figure 1. Typical Drain Characteristics
1.6
1.4
1.2
V_GS = 4.5 V
1.0
I_D = 100 mA
0.8
0.6
V_GS = 10 V
I_D = 300 mA
0.4
0.2
0
−60 −40 −20
0 20 40 60 80 100 120 140 160
TEMPERATURE (°C)
Figure 2. On Resistance versus Temperature
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