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MMBF0201NL Datasheet, PDF (2/5 Pages) ON Semiconductor – Power MOSFET
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MMBF0201NL, MVMBF0201NL
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10 mA)
V(BR)DSS
20
−
−
Vdc
Zero Gate Voltage Drain Current
(VDS = 16 Vdc, VGS = 0 Vdc)
(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 1)
IDSS
IGSS
mAdc
−
−
1.0
−
−
10
−
−
±100
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
Static Drain−to−Source On−Resistance
(VGS = 10 Vdc, ID = 300 mAdc)
(VGS = 4.5 Vdc, ID = 100 mAdc)
Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc)
DYNAMIC CHARACTERISTICS
VGS(th)
rDS(on)
gFS
1.0
1.7
2.4
Vdc
W
−
0.75
1.0
−
1.0
1.4
−
450
−
mMhos
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
(VDS = 5.0 V)
(VDS = 5.0 V)
(VDG = 5.0 V)
Ciss
Coss
Crss
−
45
−
pF
−
25
−
−
5.0
−
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDD = 15 Vdc, ID = 300 mAdc,
RL = 50 W)
Fall Time
Gate Charge (See Figure 5)
SOURCE−DRAIN DIODE CHARACTERISTICS
td(on)
tr
td(off)
tf
QT
−
2.5
−
ns
−
2.5
−
−
15
−
−
0.8
−
−
1400
−
pC
Continuous Current
IS
−
−
0.3
A
Pulsed Current
ISM
−
−
0.75
Forward Voltage (Note 2)
VSD
−
0.85
−
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
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