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| MMBD6100LT1_06 Datasheet, PDF (2/3 Pages) ON Semiconductor – Monolithic Dual Switching Diode | |||
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820 W
+10 V
2.0 k
100 mH IF
0.1 mF
DUT
50 W OUTPUT
PULSE
GENERATOR
MMBD6100LT1
0.1 mF
tr
tp
t
10%
50 W INPUT
SAMPLING
VR
OSCILLOSCOPE
90%
INPUT SIGNAL
IF
trr
t
iR(REC) = 1.0 mA
IR
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
CURVES APPLICABLE TO EACH CATHODE
100
10
TA = 85°C
10
TA = â40°C
1.0
TA = 25°C
0.1
1.0
0.01
TA = 150°C
TA = 125°C
TA = 85°C
TA = 55°C
TA = 25°C
0.1
0.001
0.2
0.4
0.6
0.8
1.0
1.2
0
10
20
30
40
50
VF, FORWARD VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Forward Voltage
Figure 3. Leakage Current
1.0
0.9
0.8
0.7
0.6
0
2
4
6
8
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
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