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MJW21192_05 Datasheet, PDF (2/6 Pages) ON Semiconductor – 8.0 A POWER TRANSISTORS COMPLEMENTARY SILICON 150 V, 125 W
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MJW21192 (NPN), MJW21191 (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 10 mAdc, IB = 0)
Collector Cutoff Current
(VCB = 250 Vdc, IE = 0)
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 4.0 Adc, VCE = 2.0 Vdc)
(IC = 8.0 Adc, VCE = 2.0 Vdc)
Collector−Emitter Saturation Voltage
(IC = 4.0 Adc, IB = 0.4 Adc)
(IC = 8.0 Adc, IB = 1.6 Adc)
Base−Emitter On Voltage
(IC = 4.0 Adc, VCE = 2.0 Vdc)
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product (Note 2)
(IC = 1.0 Adc, VCE = 10 Vdc, ftest = 1.0 MHz)
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
2. fT = ⎪hfe⎪• ftest.
Symbol
Min
VCEO(sus)
150
ICES
−
IEBO
−
hFE
15
5.0
VCE(sat)
−
−
VBE(on)
−
fT
4.0
Max
Unit
Vdc
−
mAdc
10
mAdc
10
−
100
−
Vdc
1.0
2.0
2.0
Vdc
−
MHz
1.0
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01 0.01
0.00001
0.0001
0.001
0.01
0.1
1.0
t, TIME (s)
Figure 2. Thermal Response
DUTY
CYCLE,
P(pk) D = t1/t2
t1
t2
ZθJC(t) = r(t) RθJC
RθJC = 1.65°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) ZθJC(t)
10
100
1000
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation then the curves indicate.
The data of Figures 3 and 4 is based on TJ(pk) = 150_C;
TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
< 150_C. TJ(pk) may be calculated from the data in
Figure 2. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
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