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MJL0281A Datasheet, PDF (2/5 Pages) ON Semiconductor – Complementary NPN-PNP Power Bipolar Transistors
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MJL0281A (NPN) MJL0302A (PNP)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 30 mA, IB = 0)
Collector Cutoff Current
(VCB = 260 V, IE = 0)
Emitter Cutoff Current
(VEB = 5.0 V, IC = 0)
ON CHARACTERISTICS
DC Current Gain
(IC = 0.5 A, VCE = 5.0 V)
(IC = 1.0 A, VCE = 5.0 V)
(IC = 3.0 A, VCE = 5.0 V)
Collector−Emitter Saturation Voltage
(IC = 5.0 A, IB = 0.5 A)
Base−Emitter On Voltage
(IC = 5.0 A, VCE = 5.0 V)
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 1.0 A, VCE = 5.0 V, ftest = 1.0 MHz)
Output Capacitance
(VCB = 10 V, IE = 0, ftest = 1.0 MHz)
Symbol
RqJC
Value
0.69
Symbol
Min
VCEO(sus)
260
ICBO
−
IEBO
−
Max
−
10
5.0
hFE
75
150
75
150
75
150
VCE(sat)
−
1.0
VBE(on)
−
1.2
fT
30
−
Cob
−
400
Unit
°C/W
Unit
V
mA
mA
−
V
V
MHz
pF
200
180
160
140
120
100
80
60
40
20
0
0
20 40 60 80 100 120 140 160
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
100
10
1
0.1
0.01
1
100 ms
1.0 ms
5.0 ms
10 ms
DC
10
100
1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 2. Safe Operating Area
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