MJE5730_06 Datasheet, PDF (2/5 Pages) ON Semiconductor – High Voltage PNP Silicon Plastic Power Transistors

MJE5730, MJE5731, MJE5731A
ELECTRICAL CHARACTERISTICS (T_C = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic
Symbol
Min
Max
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Collector−Emitter Sustaining Voltage (Note 1) (I}C ^{= 30 mAdc, I}B ^{= 0) MJE5730 V}CEO(sus)
300
−
Vdc
MJE5731
350
−
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MJE5731A
375
−
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Cutoff Current
(V_CE = 200 Vdc, I_B = 0)
(V_CE = 250 Vdc, I_B = 0)
(V_CE = 300 Vdc, I_B = 0)
(V_CE = 300 Vdc, V_BE = 0)
(V_CE = 350 Vdc, V_BE = 0)
(V_CE = 400 Vdc, V_BE = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ON CHARACTERISTICS (Note 1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DC Current Gain
(I_C = 0.3 Adc, V_CE = 10 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(IC = 1.0 Adc, VCE = 10 Vdc)}
MJE5730
MJE5731
MJE5731A
MJE5730
MJE5731
MJE5731A
I_CEO
I_CES
I_EBO
h_FE
−
1.0
mAdc
−
1.0
−
1.0
−
1.0
mAdc
−
1.0
−
1.0
−
1.0
mAdc
30
150
−
10
−
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector−Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.2 Adc)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base−Emitter On Voltage (I_C = 1.0 Adc, V_CE = 10 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Current Gain − Bandwidth Product (IC = 0.2 Adc, VCE = 10 Vdc, f = 2.0 MHz)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Small−Signal Current Gain (IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 kHz)}
V_CE(sat)
−
1.0
Vdc
V_BE(on)
−
1.5
Vdc
f_T
10
−
MHz
h_fe
25
−
−
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
200
100 _{TJ = 150°C}
50
25°C
30
−55 °C
20
10
V_CE = 10 V
5.0
3.0
2.0
0.02 0.03 0.05 0.1
0.2 0.3 0.5
1.0
2.0
I_C, COLLECTOR CURRENT (AMPS)
Figure 1. DC Current Gain
1.4
1.2
1
T_J = 25°C
0.8
0.6
−55 °C
0.4
150°C
0.2 _{VCE(sat)) @ IC/IB = 5.0}
0
0.02 0.03 0.05
0.1
0.2 0.3 0.5
1.0
2.0
I_C, COLLECTOR CURRENT (AMPS)
Figure 2. Collector−Emitter Saturation Voltage
1.4
1.2
1.0
V_BE(sat) @ I_C/I_B = 5.0
0.8
0.6
0.4
T_J = − 55°C
25°C
150°C
0.2
0
0.02 0.03 0.05
0.1
0.2 0.3 0.5
1.0
2.0
I_C, COLLECTOR CURRENT (AMPS)
Figure 3. Base−Emitter Voltage
1.0
SECOND BREAKDOWN
0.8
DERATING
0.6
THERMAL
DERATING
0.4
0.2
0
0 25 50 75 100 125 150 175
T_C, CASE TEMPERATURE (°C)
Figure 4. Normalized Power Derating
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