MJE350G Datasheet, PDF (2/3 Pages) ON Semiconductor – Plastic Medium-Power PNP Silicon Transistor

MJE350G
200 _{TJ = 150°C}
100
25°C
70
50
- 55°C
30
20
V_CE = 2.0 V
V_CC = 10 V
10
5.0 7.0 10
20 30 50 70 100 200 300 500
I_C, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
1.0
T_J = 25°C
0.8
V_BE(sat) @ I_C/I_B = 10
0.6
V_BE @ V_CE = 10 V
0.4
I_C/I_B = 10
0.2
V_CE(sat)
0
5.0 7.0 10
20 30 50 70 100
I_C, COLLECTOR CURRENT (mA)
Figure 2. “On” Voltages
I_C/I_B = 5.0
200 300 500
1000
700
100 ms
500
300
dc
200
1.0 ms
100
70
50
T_J = 150°C
500 ms
30
BONDING WIRE LIMITED
20
THERMALLY LIMITED @ T_C = 25°C
SECOND BREAKDOWN LIMITED
10
20
30
50 70 100
200 300 400
V_CE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 3. Active−Region Safe Operating Area
+ 1.2
+ 0.8 *APPLIES FOR I_C/I_B < h_FE/4
+ 100°C to + 150°C
+ 0.4
+ 25°C to + 100°C
0
- 0.4
*q_VC for V_CE(sat)
- 0.8
- 1.2
- 55°C to + 25°C
+ 25°C to + 150°C
- 1.6
- 2.0
q_VB for V_BE
- 2.4
- 55°C to + 25°C
- 2.8
5.0 7.0 10
20 30 50 70 100
I_C, COLLECTOR CURRENT (mA)
200 300 500
Figure 4. Temperature Coefficients
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I_C − V_CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 3 is based on T_J(pk) = 150_C; T_C is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T_J(pk)
≤ 150_C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
20
16
12
8.0
4.0
0
0
20 40 60 80 100 120 140 160
T_C, CASE TEMPERATURE (°C)
Figure 5. Power Derating
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