MJE340 Datasheet, PDF (2/4 Pages) Motorola, Inc – 0.5 AMPERE POWER TRANSISTOR NPN SILICON 300 VOLTS 20 WATTS

MJE340
32
28
24
20
16
12
8.0
MJE340
4.0
0
0 20 40 60 80 100 120 140 160
T_C, CASE TEMPERATURE (°C)
Figure 1. Power Temperature Derating
1.0
0.8
0.6
0.4
0.2
0
10
T_J = 25°C
V_BE(sat) @ I_C/I_B = 10
V_BE @ V_CE = 10 V
V_CE(sat) @ I_C/I_B = 10
I_C/I_B = 5.0
20 30 50
100
200 300 500
I_C, COLLECTOR CURRENT (mA)
Figure 2. “On” Voltages
ACTIVE−REGION SAFE OPERATING AREA
1.0
0.5
0.3
0.2
0.1
0.05
0.03
0.02
0.01
10
T_J = 150°C
10 ms
500 ms
dc 1.0 ms
SECOND BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMIT T_C = 25°C
SINGLE PULSE
20 30
50 70 100
200 300
V_CE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 3. MJE340
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I_C − V_CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.The data of Figure 3 is
based on T_J(pk) = 150_C; T_C is variable depending on
conditions. Second breakdown pulse limits are valid for
duty cycles to 10% provided T_J(pk) v 150_C. At high case
temperatures, thermal limitations will reduce the power that
can be handled to values less than the limitations imposed by
second breakdown.
http://onsemi.com
2