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MJB44H11_05 Datasheet, PDF (2/6 Pages) ON Semiconductor – Complementary Power Transistors D2PAK for Surface Mount | |||
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MJB44H11 (NPN), MJB45H11 (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
CollectorâEmitter Sustaining Voltage (IC = 30 mA, IB = 0)
Collector Cutoff Current (VCE = Rated VCEO, VBE = 0)
Emitter Cutoff Current (VEB = 5 Vdc)
ON CHARACTERISTICS
CollectorâEmitter Saturation Voltage (IC = 8 Adc, IB = 0.4 Adc)
BaseâEmitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc)
DC Current Gain (VCE = 1 Vdc, IC = 2 Adc)
DC Current Gain (VCE = 1 Vdc, IC = 4 Adc)
DYNAMIC CHARACTERISTICS
Collector Capacitance (VCB = 10 Vdc, ftest = 1 MHz)
MJB44H11
MJB45H11
Gain Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz)
MJB44H11
MJB45H11
SWITCHING TIMES
Delay and Rise Times(IC = 5 Adc, IB1 = 0.5 Adc)
MJB44H11
MJB45H11
Storage Time(IC = 5 Adc, IB1 = IB2 = 0.5 Adc)
MJB44H11
MJB45H11
Fall Time(IC = 5 Adc, IB1 = IB2 = 0.5 Adc)
MJB44H11
MJB45H11
Symbol
VCEO(sus)
ICES
IEBO
VCE(sat)
VBE(sat)
hFE
Ccb
fT
td + tr
ts
tf
Min
Typ
Max Unit
80
â
â
Vdc
â
â
10
mA
â
â
50
mA
â
â
1.0
Vdc
â
â
1.5
Vdc
60
â
â
â
40
â
â
pF
â
130
â
â
230
â
MHz
â
50
â
â
40
â
ns
â
300
â
â
135
â
ns
â
500
â
â
500
â
ns
â
140
â
â
100
â
1.0
0.7 D = 0.5
0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
0.05
0.02
0.03
0.02 0.01
SINGLE PULSE
0.01
0.01 0.02
0.05 0.1 0.2
ZqJC(t) = r(t) RqJC
RqJC = 1.56°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) â TC = P(pk) ZqJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.5 1.0 2.0
5.0 10 20
t, TIME (ms)
50 100 200
500 1.0 k
Figure 1. Thermal Response
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