MCR100-8 Datasheet, PDF (2/7 Pages) SemiWell Semiconductor – Sensitive Gate Silicon Controlled Rectifiers

MCR100 Series
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive Off−State Voltage (Notes 1 and 2)
V_DRM,
V
(T_J = *40 to 110°C, Sine Wave, 50 to 60 Hz; R_GK = 1 kW)
V_RRM
MCR100−3
100
MCR100−4
200
MCR100−6
400
MCR100−8
600
On-State RMS Current, (T_C = 80°C) 180° Conduction Angles
I_T(RMS)
0.8
A
Peak Non-Repetitive Surge Current, (1/2 Cycle, Sine Wave, 60 Hz, T_J = 25°C)
I_TSM
10
A
Circuit Fusing Consideration, (t = 8.3 ms)
I²t
0.415
A²s
Forward Peak Gate Power, (T_A = 25°C, Pulse Width v 1.0 ms)
P_GM
0.1
W
Forward Average Gate Power, (T_A = 25°C, t = 8.3 ms)
P_G(AV)
0.01
W
Forward Peak Gate Current, (T_A = 25°C, Pulse Width v 1.0 ms)
I_GM
1.0
A
Reverse Peak Gate Voltage, (T_A = 25°C, Pulse Width v 1.0 ms)
V_GRM
5.0
V
Operating Junction Temperature Range @ Rate V_RRM and V_DRM
T_J
−40 to 110
°C
Storage Temperature Range
T_stg
−40 to 150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. V_DRM and V_RRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
2. See ordering information for exact device number options.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,Junction−to−Case
Junction−to−Ambient
R_qJC
75
°C/W
R_qJA
200
Lead Solder Temperature
(t1/16″ from case, 10 secs max)
T_L
260
°C
ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current (Note 3)
(V_D = Rated V_DRM and V_RRM; R_GK = 1 kW)
T_C = 25°C
T_C = 110°C
ON CHARACTERISTICS
Peak Forward On−State Voltage^*
(I_TM = 1.0 A Peak @ T_A = 25°C)
Gate Trigger Current (Note 4)
(V_AK = 7.0 Vdc, R_L = 100 W)
T_C = 25°C
Holding Current (Note 3)
T_C = 25°C
(V_AK = 7.0 Vdc, Initiating Current = 20 mA, R_GK = 1 kW) T_C = −40°C
Latch Current (Note 4)
(V_AK = 7.0 V, Ig = 200 mA)
T_C = 25°C
T_C = −40°C
Gate Trigger Voltage (Note 4)
(V_AK = 7.0 Vdc, R_L = 100 W)
T_C = 25°C
T_C = −40°C
DYNAMIC CHARACTERISTICS
I_DRM, I_RRM
V_TM
I_GT
I_H
I_L
V_GT
mA
−
−
10
−
−
100
−
−
1.7
V
−
40
200
mA
−
0.5
5.0
mA
−
−
10
−
0.6
10
mA
−
−
15
−
0.62
0.8
V
−
−
1.2
Critical Rate of Rise of Off−State Voltage
(V_D = Rated V_DRM, Exponential Waveform, R_GK = 1 kW,T_J = 110°C)
Critical Rate of Rise of On−State Current
(I_PK = 20 A; Pw = 10 msec; diG/dt = 1 A/msec, Igt = 20 mA)
*Indicates Pulse Test: Pulse Width ≤ 1.0 ms, Duty Cycle ≤ 1%.
3. R_GK = 1000 W included in measurement.
4. Does not include R_GK in measurement.
dV/dt
di/dt
20
35
−
V/ms
−
−
50
A/ms
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