MCH6613 Datasheet, PDF (2/8 Pages) Sanyo Semicon Device – Ultrahigh-Speed Switching Applications

MCH6613
Electrical Characteristics at Ta=25°C
Parameter
[N-channel]
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
[P-channel]
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=100μA
VDS=10V, ID=80mA
ID=80mA, VGS=4V
ID=40mA, VGS=2.5V
ID=10mA, VGS=1.5V
VDS=10V, f=1MHz
See specified Test Circuit.
VDS=10V, VGS=10V, ID=150mA
IS=150mA, VGS=0V
ID=--1mA, VGS=0V
VDS=--30V, VGS=0V
VGS=±8V, VDS=0V
VDS=--10V, ID=--100μA
VDS=--10V, ID=--50mA
ID=--50mA, VGS=--4V
ID=--30mA, VGS=--2.5V
ID=--1mA, VGS=--1.5V
VDS=--10V, f=1MHz
See specified Test Circuit.
VDS=--10V, VGS=--10V, ID=--100mA
IS=--100mA, VGS=0V
Ratings
Unit
min
typ
max
30
V
1
μA
±10
μA
0.4
1.3
V
150
220
mS
2.9
3.7
Ω
3.7
5.2
Ω
6.4
12.8
Ω
7.0
pF
5.9
pF
2.3
pF
19
ns
65
ns
155
ns
120
ns
1.58
nC
0.26
nC
0.31
nC
0.87
1.2
V
--30
--0.4
80
110
8
11
27
7.5
5.7
1.8
24
55
120
130
1.43
0.18
0.25
--0.83
V
--1
μA
±10
μA
--1.4
V
mS
10.4
Ω
15.4
Ω
54
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
--1.2
V
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