MC79L00_06 Datasheet, PDF (2/11 Pages) ON Semiconductor – 100 mA Negative Voltage Regulators

MC79L00, MC79L00A Series
MAXIMUM RATINGS (T_A = +25°C, unless otherwise noted.)
Rating
Input Voltage
(−5 V)
(−12, −15, −18 V)
(−24 V)
Symbol
Value
Unit
V_I
−30
Vdc
−35
−40
Power Dissipation
Case 29 (TO−92 Type)
T_A = 25°C
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
PD
R_qJA
R_qJC
Internally Limited
160
83
W
°C/W
°C/W
Case 751 (SOIC−8 Type) (Note 1)
T_A = 25°C
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
PD
R_qJA
R_qJC
Internally Limited
180
45
W
°C/W
°C/W
Storage Temperature Range
T_stg
−65 to +150
°C
Junction Temperature
T_J
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. SOIC−8 Junction−to−Ambient Thermal Resistance is for minimum recommended pad size. Refer to Figure 9 for Thermal Resistance variation
versus pad size.
*This device series contains ESD protection and exceeds the following tests:
Human Body Model 2000 V per MIL_STD_883, Method 3015
Machine Model Method 200 V.
ELECTRICAL CHARACTERISTICS (V_I = −10 V, I_O = 40 mA, C_I = 0.33 mF, C_O = 0.1 mF, −40°C < T_J +125°C (for MC79LXXAB),
0°C < T_J < +125°C (for MC79LXXAC)).
MC79L05C, AB
MC79L05AC, AB
Characteristics
Symbol Min Typ Max Min Typ Max Unit
Output Voltage (T_J = +25°C)
Input Regulation (T_J = +25°C)
−7.0 Vdc ≥ V_I ≥ −20 Vdc
−8.0 Vdc ≥ V_I ≥ −20 Vdc
V_O
−4.6 −5.0 −5.4 −4.8 −5.0 −5.2 Vdc
Reg_line
−
−
−
200
−
−
150
−
mV
−
150
−
100
Load Regulation
T_J = +25°C, 1.0 mA ≤ I_O ≤ 100 mA
1.0 mA ≤ I_O ≤ 40 mA
Reg_load
−
−
−
60
−
−
30
−
mV
−
60
−
30
Output Voltage
−7.0 Vdc ≥ V_I ≥ −20 Vdc, 1.0 mA ≤ I_O ≤ 40 mA
V_I = −10 Vdc, 1.0 mA ≤ I_O ≤ 70 mA
V_O
Vdc
−4.5 − −5.5 −4.75 − −5.25
−4.5 − −5.5 −4.75 − −5.25
Input Bias Current
(T_J = +25°C)
(T_J = +125°C)
I_IB
mA
−
−
6.0
−
−
6.0
−
−
5.5
−
−
5.5
Input Bias Current Change
−8.0 Vdc ≥ V_I ≥ −20 Vdc
1.0 mA ≤ I_O ≤ 40 mA
I_IB
mA
−
−
1.5
−
−
1.5
−
−
0.2
−
−
0.1
Output Noise Voltage (T_A = +25°C, 10 Hz ≤ f ≤ 100 kHz)
V_n
−
40
−
−
40
−
mV
Ripple Rejection (−8.0 ≥ V_I ≥ −18 Vdc, f = 120 Hz, T_J = +25°C)
RR
40
49
−
41
49
−
dB
Dropout Voltage (I_O = 40 mA, T_J = +25°C)
|V_I−V_O|
−
1.7
−
−
1.7
−
Vdc
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