MC78FC00_09 Datasheet, PDF (2/5 Pages) ON Semiconductor – Micropower Voltage Regulator

MC78FC00 Series
MAXIMUM RATINGS (T_C = 25°C, unless otherwise noted.)
Rating
Symbol
Value
Unit
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Input Voltage
V_CC
10
Vdc
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Power Dissipation and Thermal Characteristics Maximum Power Dissipation
Case 1213 (SOT−89) H Suffix
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ _{Thermal Resistance, Junction−to−Ambient}
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ _{Operating Junction Temperature}
P_D
R_qJA
T_J
mW
900
111
°C/W
125
°C
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ _{Operating Ambient Temperature}
T_A
−30 to +80
°C
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ _{Storage Temperature Range}
T_stg
−40 to +125
°C
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ _{Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the}
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. ESD data available upon request.
ELECTRICAL CHARACTERISTICS (V_in = V_O + 1.0 V, I_O = 10 mA, T_J = 25°C [Note 2], unless otherwise noted.)
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Output Voltage
30HT1 Suffix (V_in = 5.0 V)
Characteristic
Symbol
Min
Typ
Max
Unit
V_O
V
2.925 3.0 3.075
33HT1 Suffix (V_in = 6.0 V)
3.218 3.3 3.382
40HT1 Suffix (V_in = 7.0 V)
50HT1 Suffix (V_in = 8.0 V)
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Line Regulation
V_in = [V_O + 1.0] V to 10 V, I_O = 10 mA
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ _{Load Regulation}
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ _{Vin = [VO + 1.0], IO = 1.0 to 10 mA}
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ _{Output Current}
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ^{30HT1 Suffix (Vin = 5.0 V)}
3.900 4.0 4.100
4.875 5.0 5.125
Reg_line
−
0.1
−
mV
Reg_load
−
40
80
mV
I_O
mA
50
80
−
33HT1 Suffix (V_in = 6.0 V)
65
100
−
40HT1 Suffix (V_in = 7.0 V)
65
100
−
50HT1 Suffix (V_in = 8.0 V)
Dropout Voltage
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ _{IO = 40 mA}
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ _{Quiescent Current}
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ 30HT1 Suffix (V_in = 5.0 V)
80
120
−
V_in − V_O
−
0.5
0.7
V
I_CC
mA
−
1.1
3.3
33HT1 Suffix (V_in = 5.0 V)
−
1.1
3.3
40HT1 Suffix (V_in = 6.0 V)
−
1.2
3.6
50HT1 Suffix (V_in = 7.0 V)
−
1.3
3.9
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Output Voltage Temperature Coefficient
T_C
−
±100
−
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ^{2. Low duty pulse techniques are used during test to maintain junction temperature as close to ambient as possible.}
ppm/°C
DEFINITIONS
Dropout Voltage − The input/output voltage differential at
which the regulator output no longer maintains regulation
against further reductions in input voltage. Measured when
the output drops 100 mV below its nominal value (which is
measured at 1.0 V differential), dropout voltage is affected
by junction temperature, load current and minimum input
supply requirements.
Line Regulation − The change in output voltage for a
change in input voltage. The measurement is made under
conditions of low dissipation or by using pulse techniques
such that average chip temperature is not significantly
affected.
Load Regulation − The change in output voltage for a
change in load current at constant chip temperature.
Maximum Power Dissipation − The maximum total device
dissipation for which the regulator will operate within
specifications.
Quiescent Bias Current − Current which is used to operate
the regulator chip and is not delivered to the load.
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