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MC74VHCT125A Datasheet, PDF (2/8 Pages) ON Semiconductor – Quad Bus Buffer | |||
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MC74VHCT125A
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ MAXIMUM RATINGS*
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Symbol
Parameter
Value
Unit
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ VCC
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Vin
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Vout
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ IIK
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ IOK
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Iout
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ ICC
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ PD
DC Supply Voltage
â 0.5 to + 7.0
V
DC Input Voltage
â 0.5 to + 7.0
V
DC Output Voltage
Input Diode Current
â 0.5 to VCC + 0.5 V
â 20
mA
Output Diode Current
± 20
mA
DC Output Current, per Pin
± 25
mA
DC Supply Current, VCC and GND Pins
± 50
mA
Power Dissipation in Still Air,
SOIC Packagesâ
500
mW
TSSOP Packageâ
450
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this highâimpedance cir-
cuit. For proper operation, Vin and
v v Vout should be constrained to the
range GND (Vin or Vout) VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Tstg Storage Temperature
â 65 to + 150
_C
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ * Absolute maximum continuous ratings are those values beyond which damage to the device may occur. Exposure to these conditions or
conditions beyond those indicated may adversely affect device reliability. Functional operation under absoluteâmaximumârated conditions is not
implied.
â Derating â SOIC Packages: â 7 mW/_C from 65_ to 125_C
TSSOP Package: â 6.1 mW/_C from 65_ to 125_C
RECOMMENDED OPERATING CONDITIONS
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Symbol
Parameter
Min Max Unit
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ VCC
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Vin
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Vout
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ TA
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ tr, tf
DC Supply Voltage
4.5
DC Input Voltage
0
DC Output Voltage
0
Operating Temperature, All Package Types
â 40
Input Rise and Fall Time
VCC =5.0V ±0.5V 0
5.5
5.5
VCC
+ 85
20
V
V
V
_C
ns/V
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ DC ELECTRICAL CHARACTERISTICS
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Symbol
Parameter
Test Conditions
VCC
(V)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ VIH MinimumHighâLevelInput
3.0
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Voltage
4.5
5.5
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ VIL MaximumLowâLevelInput
3.0
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Voltage
4.5
5.5
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ VOH
Minimum HighâLevel
Output Voltage
VIN = VIH or VIL
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ VOL
Maximum LowâLevel
Output Voltage
VIN = VIH or VIL
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ IIN MaximumInputLeakage
Current
VIN = VIH or VIL
IOH = â 50µA
VIN = VIH or VIL
IOH = â 4mA
IOH = â 8mA
VIN = VIH or VIL
IOL = 50µA
VIN = VIH or VIL
IOL = 4mA
IOL = 8mA
VIN = 5.5 V or
GND
3.0
4.5
3.0
4.5
3.0
4.5
3.0
4.5
0 to 5.5
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ ICC Maximum Quiescent Supply VIN=VCCorGND 5.5
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Current
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ ICCT Quiescent Supply Current Input: VIN = 3.4V
5.5
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ IOPD OutputLeakageCurrent
VOUT = 5.5V
0.0
TA = 25°C
Min Typ Max
1.2
2.0
2.0
0.53
0.8
0.8
2.9 3.0
4.4 4.5
2.58
3.94
0.0 0.1
0.0 0.1
0.36
0.36
± 0.1
2.0
1.35
0.5
TA ⤠85°C
Min Max
1.2
2.0
2.0
0.53
0.8
0.8
2.9
4.4
2.48
3.80
0.1
0.1
0.44
0.44
± 1.0
20
1.50
5.0
TA ⤠125°C
Min Max Unit
1.2
V
2.0
2.0
0.53 V
0.8
0.8
2.9
V
4.4
2.34
3.66
0.1 V
0.1
0.52
0.52
± 1.0 µA
40 µA
1.65 mA
10 µA
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