MC74VHC541_12 Datasheet, PDF (2/7 Pages) ON Semiconductor – Octal Bus Buffer

MC74VHC541
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V_CC DC Supply Voltage
– 0.5 to + 7.0
V
V_in
DC Input Voltage
– 0.5 to + 7.0
V
V_out DC Output Voltage
– 0.5 to V_CC + 0.5 V
I_IK
Input Diode Current
− 20
mA
I_OK Output Diode Current
± 20
mA
I_out DC Output Current, per Pin
± 25
mA
I_CC DC Supply Current, V_CC and GND Pins
± 50
mA
P_D Power Dissipation in Still Air, SOIC Packages†
500
mW
TSSOP Package†
450
T_stg Storage Temperature
– 65 to + 150
_C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress
ratings only. Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device
reliability.
†Derating — SOIC Packages: – 7 mW/_C from 65_ to 125_C
TSSOP Package: − 6.1 mW/_C from 65_ to 125_C
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance cir-
cuit. For proper operation, V_in and
V_out should be constrained to the
range GND v (V_in or V_out) v V_CC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or V_CC).
Unused outputs must be left open.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
V_CC DC Supply Voltage
V_in
DC Input Voltage
V_out DC Output Voltage
T_A
Operating Temperature, All Package Types
t_r, t_f Input Rise and Fall Time
V_CC = 3.3V ±0.3V
V_CC = 5.0V ±0.5V
Min
Max Unit
2.0
5.5
V
0
5.5
V
0
V_CC
V
−55
+125
_C
0
100 ns/V
0
20
DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
V_CC
Test Conditions
V
T_A = 25°C
Min
Typ
Max
T_A = − 55 to 125°C
Min
Max Unit
V_IH Minimum High−Level Input
Voltage
V_IL Maximum Low−Level Input
Voltage
V_OH Minimum High−Level Output V_in = V_IH or V_IL
Voltage
I_OH = − 50mA
2.0
1.50
3.0 to 5.5 V_CC x 0.7
1.50
V
V_CC x 0.7
2.0
3.0 to 5.5
0.50
V_CC x 0.3
0.50
V
V_CC x 0.3
2.0
1.9
2.0
1.9
V
3.0
2.9
3.0
2.9
4.5
4.4
4.5
4.4
V_in = V_IH or V_IL
I_OH = − 4mA
3.0
I_OH = − 8mA
4.5
V_OL Maximum Low−Level Output V_in = V_IH or V_IL
2.0
Voltage
I_OL = 50mA
3.0
4.5
2.58
3.94
0.0
0.1
0.0
0.1
0.0
0.1
2.48
3.80
0.1
V
0.1
0.1
I_in
Maximum Input Leakage
Current
V_in = V_IH or V_IL
I_OL = 4mA
I_OL = 8mA
V_in = 5.5V or GND
3.0
4.5
0 to 5.5
0.36
0.36
± 0.1
0.44
0.44
± 1.0 mA
I_OZ
Maximum 3−State Leakage
V_in = V_IL or V_IH
5.5
Current
V_out = V_CC or GND
I_CC Maximum Quiescent Supply V_in = V_CC or GND
5.5
Current
± 0.25
4.0
± 2.5 mA
40.0
mA
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