MC74VHC1GT50_15 Datasheet, PDF (2/6 Pages) ON Semiconductor – Noninverting Buffer CMOS Logic Level Shifter

MC74VHC1GT50
MAXIMUM RATINGS
Symbol
Characteristics
Value
Unit
V_CC
V_IN
V_OUT
DC Supply Voltage
DC Input Voltage
DC Output Voltage
−0.5 to +7.0
V
−0.5 to +7.0
V
V_CC = 0
−0.5 to 7.0
V
High or Low State
−0.5 to V_CC + 0.5
I_IK
I_OK
I_OUT
I_CC
P_D
q_JA
T_L
T_J
T_stg
V_ESD
Input Diode Current
Output Diode Current
DC Output Current, per Pin
DC Supply Current, V_CC and GND
Power dissipation in still air
Thermal resistance
Lead temperature, 1 mm from case for 10 secs
Junction temperature under bias
Storage temperature
ESD Withstand Voltage
V_OUT < GND; V_OUT > V_CC
SC−88A, TSOP−5
SC−88A, TSOP−5
Human Body Model (Note 1)
Machine Model (Note 2)
Charged Device Model (Note 3)
−20
+20
+25
+50
200
333
260
+150
−65 to +150
> 2000
> 200
N/A
mA
mA
mA
mA
mW
°C/W
°C
°C
°C
V
I_Latchup Latchup Performance
Above V_CC and Below GND at 125°C (Note 4)
±500
mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Tested to EIA/JESD22−A114−A
2. Tested to EIA/JESD22−A115−A
3. Tested to JESD22−C101−A
4. Tested to EIA/JESD78
RECOMMENDED OPERATING CONDITIONS
Symbol
Characteristics
V_CC DC Supply Voltage
V_IN DC Input Voltage
V_OUT DC Output Voltage
T_A
Operating Temperature Range
t_r , t_f Input Rise and Fall Time
Min
1.65
0.0
V_CC = 0
0.0
High or Low State
0.0
−55
V_CC = 3.3 V ± 0.3 V
0
V_CC = 5.0 V ± 0.5 V
0
Max
5.5
5.5
5.5
V_CC
+125
100
20
Unit
V
V
V
°C
ns/V
Device Junction Temperature versus
Time to 0.1% Bond Failures
Junction
Temperature °C
Time, Hours
80
1,032,200
90
419,300
100
178,700
110
79,600
120
37,000
130
17,800
140
8,900
Time, Years
117.8
47.9
20.4
9.4
4.2
2.0
1.0
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
1
1
10
100
1000
TIME, YEARS
Figure 3. Failure Rate vs. Time Junction Temperature
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