MC74VHC1G125_12 Datasheet, PDF (2/6 Pages) ON Semiconductor – Noninverting 3-State Buffer

MC74VHC1G125
MAXIMUM RATINGS
Symbol
Characteristics
Value
Unit
V_CC
V_IN
V_OUT
I_IK
I_OK
I_OUT
I_CC
P_D
q_JA
T_L
T_J
T_stg
V_ESD
DC Supply Voltage
DC Input Voltage
DC Output Voltage
V_CC = 0
High or Low State
Input Diode Current
Output Diode Current
DC Output Current, per Pin
V_OUT < GND; V_OUT > V_CC
DC Supply Current, V_CC and GND
Power Dissipation in Still Air
SC−88A, TSOP−5
Thermal Resistance
SC−88A, TSOP−5
Lead Temperature, 1 mm from Case for 10 secs
Junction Temperature Under Bias
Storage Temperature
ESD Withstand Voltage
Human Body Model (Note 1)
Machine Model (Note 2)
Charged Device Model (Note 3)
−0.5 to +7.0
−0.5 to +7.0
−0.5 to 7.0
−0.5 to V_CC + 0.5
−20
+20
+25
+50
200
333
260
+150
−65 to +150
> 2000
> 200
N/A
V
V
V
mA
mA
mA
mA
mW
°C/W
°C
°C
°C
V
I_Latchup Latchup Performance
Above V_CC and Below GND at 125°C (Note 4)
$500
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Tested to EIA/JESD22−A114−A.
2. Tested to EIA/JESD22−A115−A.
3. Tested to JESD22−C101−A.
4. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol
Characteristics
V_CC
V_IN
V_OUT
T_A
t_r , t_f
DC Supply Voltage
DC Input Voltage
DC Output Voltage
Operating Temperature Range
Input Rise and Fall Time
Min
2.0
0.0
0.0
−55
V_CC = 3.3 V $ 0.3 V
0
V_CC = 5.0 V $ 0.5 V
0
Max
5.5
5.5
V_CC
+125
100
20
Unit
V
V
V
°C
ns/V
Device Junction Temperature versus
Time to 0.1% Bond Failures
Junction
Temperature °C
Time, Hours
80
1,032,200
90
419,300
100
178,700
110
79,600
120
37,000
130
17,800
140
8,900
Time, Years
117.8
47.9
20.4
9.4
4.2
2.0
1.0
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
1
1
10
100
1000
TIME, YEARS
Figure 3. Failure Rate vs. Time Junction Temperature
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2