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MC74VHC1G09_07 Datasheet, PDF (2/6 Pages) ON Semiconductor – 2−Input AND Gate with Open Drain Output
MC74VHC1G09
MAXIMUM RATINGS
Symbol
Characteristics
Value
Unit
VCC
VIN
VOUT
IIK
IOK
IOUT
ICC
PD
qJA
TL
TJ
Tstg
MSL
DC Supply Voltage
DC Input Voltage
DC Output Voltage
Input Diode Current
Output Diode Current
DC Output Current, per Pin
DC Supply Current, VCC and GND
Power dissipation in still air
Thermal resistance
Lead temperature, 1 mm from case for 10 s
Junction temperature under bias
Storage temperature
Moisture Sensitivity
SC−88A, TSOP−5
SC−88A, TSOP−5
−0.5 to +7.0
−0.5 to +7.0
−0.5 to 7.0
−20
+20
+25
+50
200
333
260
+150
−65 to +150
Level 1
V
V
V
mA
mA
mA
mA
mW
°C/W
°C
°C
°C
FR
VESD
Flammability Rating
ESD Withstand Voltage
Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in
Human Body Model (Note 1)
> 2000
V
Machine Model (Note 2)
> 200
Charged Device Model (Note 3)
N/A
ILatchup Latchup Performance
Above VCC and Below GND at 125°C (Note 4)
±500
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Tested to EIA/JESD22−A114−A
2. Tested to EIA/JESD22−A115−A
3. Tested to JESD22−C101−A
4. Tested to EIA/JESD78
RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
VIN
VOUT
TA
tr, tf
Characteristics
DC Supply Voltage
DC Input Voltage
DC Output Voltage
Operating Temperature Range
Input Rise and Fall Time
VCC = 3.3 V ± 0.3 V
VCC = 5.0 V ± 0.5 V
Device Junction Temperature versus
Time to 0.1% Bond Failures
Junction
Temperature °C
Time, Hours
80
1,032,200
90
419,300
100
178,700
110
79,600
120
37,000
130
17,800
140
8,900
Time, Years
117.8
47.9
20.4
9.4
4.2
2.0
1.0
Min
Max
Unit
2.0
5.5
V
0.0
5.5
V
0.0
7.0
V
−55
+125
°C
0
100
ns/V
0
20
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
1
1
10
100
1000
TIME, YEARS
Figure 3. Failure Rate vs. Time
Junction Temperature
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