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MC74HCO3A Datasheet, PDF (2/8 Pages) ON Semiconductor – QUAD 2-INPUT NAND GATE WITH OPEN-DRAIN OUTPUTS | |||
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MC74HC03A
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ MAXIMUM RATINGS*
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Symbol
Parameter
Value
Unit
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ VCC
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Vin
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Vout
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Iin
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Iout
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ ICC
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ PD
DC Supply Voltage (Referenced to GND)
â 0.5 to + 7.0
V
DC Input Voltage (Referenced to GND)
DC Output Voltage (Referenced to GND)
DC Input Current, per Pin
â 0.5 to VCC + 0.5 V
â 0.5 to VCC + 0.5 V
± 20
mA
DC Output Current, per Pin
± 25
mA
DC Supply Current, VCC and GND Pins
± 50
mA
Power Dissipation in Still Air
Plastic DIPâ
750
mW
SOIC Packageâ
500
TSSOP Packageâ
450
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Tstg Storage Temperature
â 65 to + 150
_C
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ TL Lead Temperature, 1 mm from Case for 10 Seconds
_C
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Plastic DIP, SOIC or TSSOP Package
260
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ *Maximum Ratings are those values beyond which damage to the device may occur.
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this highâimpedance cir-
cuit. For proper operation, Vin and
v v Vout should be constrained to the
range GND (Vin or Vout) VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
Functional operation should be restricted to the Recommended Operating Conditions.
â Derating â Plastic DIP: â 10 mW/_C from 65_ to 125_C
SOIC Package: â 7 mW/_C from 65_ to 125_C
TSSOP Package: â 6.1 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor HighâSpeed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Symbol
Parameter
Min Max Unit
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ VCC DC Supply Voltage (Referenced to GND)
2.0 6.0 V
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Vin, Vout DC Input Voltage, Output Voltage (Referenced to GND) 0 VCC V
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ TA
Operating Temperature, All Package Types
â 55 + 125 _C
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ tr, tf Input Rise and Fall Time
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ (Figure 1)
VCC = 2.0 V 0
VCC = 4.5 V 0
VCC = 6.0 V 0
1000 ns
500
400
DC CHARACTERISTICS (Voltages Referenced to GND)
Symbol
Parameter
Condition
VCC
Guaranteed Limit
V â55 to 25°C â¤85°C â¤125°C Unit
VIH
Minimum HighâLevel Input
Voltage
Vout = 0.1V or VCC â0.1V
|Iout| ⤠20µA
2.0
1.50
1.50 1.50
V
3.0
2.10
2.10 2.10
4.5
3.15
3.15 3.15
6.0
4.20
4.20 4.20
VIL
Maximum LowâLevel Input
Voltage
Vout = 0.1V or VCC â 0.1V
|Iout| ⤠20µA
2.0
0.50
0.50 0.50
V
3.0
0.90
0.90 0.90
4.5
1.35
1.35 1.35
6.0
1.80
1.80 1.80
VOL
Maximum LowâLevel Output
Voltage
Vout = 0.1V or VCC â 0.1V
|Iout| ⤠20µA
2.0
0.1
4.5
0.1
6.0
0.1
0.1
0.1
V
0.1
0.1
0.1
0.1
Vin = VIH or VIL |Iout| ⤠2.4mA 3.0
0.26
0.33 0.40
|Iout| ⤠4.0mA 4.5
0.26
0.33 0.40
|Iout| ⤠5.2mA 6.0
0.26
0.33 0.40
Iin
Maximum Input Leakage Current Vin = VCC or GND
6.0
±0.1
±1.0
±1.0
µA
ICC
Maximum Quiescent Supply
Current (per Package)
Vin = VCC or GND
Iout = 0µA
6.0
1.0
10
40
µA
IOZ
Maximum ThreeâState Leakage Output in HighâImpedance State 6.0
±0.5
±5.0
±10
µA
Current
Vin = VIL or VIH
Vout = VCC or GND
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor HighâSpeed CMOS Data Book (DL129/D).
http://onsemi.com
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