MC74HC86A_14 Datasheet, PDF (2/6 Pages) ON Semiconductor – Quad 2-Input Exclusive OR Gate

MC74HC86A
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Symbol
Parameter
Value
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^VCC ^{DC Supply Voltage (Referenced to GND)}
–0.5 to +7.0
V
V_in DC Input Voltage (Referenced to GND)
–0.5 to V_CC + 0.5 V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Vout DC Output Voltage (Referenced to GND)}
–0.5 to V_CC + 0.5 V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Iin
DC Input Current, per Pin
±20
mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Iout DC Output Current, per Pin}
±25
mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{ICC DC Supply Current, VCC and GND Pins}
±50
mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{PD Power Dissipation in Still Air,}
SOIC Package†
500
mW
TSSOP Package†
450
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Tstg Storage Temperature}
–65 to +150
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{TL Lead Temperature, 1 mm from Case for 10 Seconds}
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(Plastic DIP, SOIC or TSSOP Package)}
260
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of}
these limits are exceeded, device functionality should not be assumed, damage may occur and
reliability may be affected.
†Derating: SOIC Package: – 7mW/_C from 65_ to 125_C
TSSOP Package: −6.1 mW/_C from 65_ to 125_C
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance cir-
cuit. For proper operation, V_in and
V_out should be constrained to the
range GND v (V_in or V_out) v V_CC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or V_CC).
Unused outputs must be left open.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
V_CC DC Supply Voltage (Referenced to GND)
2.0
6.0
V
V_in, V_out DC Input Voltage, Output Voltage (Referenced to GND)
0
V_CC
V
T_A Operating Temperature, All Package Types
– 55
+ 125
_C
t_r, t_f Input Rise and Fall Time
(Figure 1)
V_CC = 2.0 V
V_CC = 4.5 V
V_CC = 6.0 V
0
1000
ns
0
500
0
400
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Symbol
Parameter
V_CC
Test Conditions
V
V_IH Minimum High−Level Input
V_out = 0.1 V or V_CC – 0.1 V
2.0
Voltage
|I_out| v 20 mA
3.0
4.5
6.0
V_IL Maximum Low−Level Input
V_out = 0.1 V or V_CC – 0.1 V
2.0
Voltage
|I_out| v 20 mA
3.0
4.5
6.0
V_OH Minimum High−Level Output
V_in = V_IH or V_IL
2.0
Voltage
|I_out| v 20 mA
4.5
6.0
V_OL Maximum Low−Level Output
Voltage
V_in = V_IH or V_IL |I_out| v 2.4 mA 3.0
|I_out| v 4.0 mA 4.5
|I_out| v 5.2 mA 6.0
V_in = V_IH or V_IL
2.0
|I_out| v 20 mA
4.5
6.0
V_in = V_IH or V_IL |I_out| v 2.4 mA 3.0
|I_out| v 4.0 mA 4.5
|I_out| v 5.2 mA 6.0
I_in
Maximum Input Leakage Current V_in = V_CC or GND
6.0
I_CC Maximum Quiescent Supply
V_in = V_CC or GND
6.0
Current (per Package)
I_out = 0 mA
Guaranteed Limit
–55 to
25_C
v 85_C v 125_C Unit
1.5
1.5
1.5
V
2.1
2.1
2.1
3.15
3.15
3.15
4.2
4.2
4.2
0.5
0.5
0.5
V
0.9
0.9
0.9
1.35
1.35
1.35
1.8
1.8
1.8
1.9
1.9
1.9
V
4.4
4.4
4.4
5.9
5.9
5.9
2.48
2.34
2.20
3.98
3.84
3.70
5.48
5.34
5.20
0.1
0.1
0.1
V
0.1
0.1
0.1
0.1
0.1
0.1
0.26
0.33
0.40
0.26
0.33
0.40
0.26
0.33
0.40
±0.1
±1.0
±1.0
mA
1.0
10
40
mA
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