MBRS410LT3 Datasheet, PDF (2/4 Pages) ON Semiconductor – Surface Mount Schottky Power Rectifier

MBRS410LT3
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance – Junction–to–Lead
Thermal Resistance – Junction–to–Ambient
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 1)
(IF = 2.0 A)
(IF = 4.0 A)
(IF = 8.0 A)
Maximum Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, VR = 5.0 V)
(Rated dc Voltage, VR = 10 V)
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
2. Mounted with Minimum Recommended Pad Size, PC Board FR4.
Symbol
R_θJL
R_θJA
VF
IR
100
100
Min Pad
(Note 2)
12
109
TJ = 25°C
0.31
0.33
0.35
TJ = 25°C
2.0
5.0
1 Inch Pad
7.0
59
TJ = 100°C
0.200
0.225
0.250
TJ = 100°C
100
200
Unit
°C/W
V
mA
VF @ 125°C
10
100°C
1
0.1
0
75°C _25°C
–40°C
0.1
0.2
0.3
0.4
VF, INSTANTANEOUS VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
1.00E+00
1.00E–01
IR @ 125°C
100°C
1.00E–02
75°C
10
VF @ 125°C
1
100°C
75°C ^25°C
0.1
0.5
0
10000
0.1
0.2
0.3
0.4
0.5
VF, INSTANTANEOUS VOLTAGE (VOLTS)
Figure 2. Maximum Forward Voltage
f = 1 Mhz
25°C
1.00E–03
25°C
1.00E–04
1000
0
2
4
6
8
10
0
2
4
6
8
10
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Typical Capacitance
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