MBRS320P Datasheet, PDF (2/4 Pages) ON Semiconductor – Surface Mount Schottky Power Rectifier

MBRS320P, MBRS330P, MBRS340P
MAXIMUM RATINGS
Rating
Symbol MBRS320PT3G MBRS330PT3G MBRS340PT3G Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V_RRM
20
30
40
V
V_RWM
V_R
Average Rectified Forward Current
I_F(AV)
3.0 @ T_L = 110°C
A
4.0 @ T_L = 105°C
Nonrepetitive Peak Surge Current
I_FSM
A
(Surge applied at rated load conditions halfwave,
80
single phase, 60 Hz)
Operating Junction Temperature
T_J
ISO 7637 Pulse #1
(100 V, 10W)
− 65 to +150
5000
°C
Pulses
ESD Ratings:
Machine Model = C
Human Body Model = 3B
V
> 400
> 8000
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Thermal Resistance, Junction−to−Lead
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 1)
(i_F = 3.0 A, T_J = 25°C)
Maximum Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, T_J = 25°C)
(Rated dc Voltage, T_J = 100°C)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
R_qJL
V_F
i_R
11
°C/W
V
0.50
mA
2.0
20
TYPICAL ELECTRICAL CHARACTERISTICS
10
10
T_J = 125°C
1
T_J = 100°C
T_J = 25°C
T_J = −40°C
0.1
0
T_J = −65°C
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
V_F, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage
T_J = 125°C
1
T_J = 100°C
T_J = 25°C
T_J = −40°C
T_J = −65°C
0.1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
V_F, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2. Maximum Forward Voltage
www.onsemi.com
2