English
Language : 

MBRS3201P Datasheet, PDF (2/4 Pages) ON Semiconductor – Schottky Fast Soft-Recovery Power Rectifier
MBRS3201P
MAXIMUM RATINGS
Characteristic
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
200
V
VRWM
VR
Average Rectified Forward Current (Rated VR, TC = 70°C)
IF(AV)
3
A
Nonrepetitive Peak Surge Current
IFSM
100
A
Operating Junction Temperature
TJ
−55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Lead
Thermal Resistance, Junction−to−Ambient
Symbol
RqJL
RqJA
Value
12
60
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage
(IF = 3 A, TJ = 25°C)
(IF = 3 A, TJ = 150°C)
Maximum Instantaneous Reverse Current (Rated VR)
(Rated DC Voltage, TJ = 25°C)
(Rated DC Voltage, TJ = 150°C)
Maximum Reverse Recovery Time
(IF = 1 A, di/dt = 100 A/us, VR = 30 V)
Symbol
Value
Unit
VF
V
0.84
0.59
IR
1.0
mA
5.0
mA
trr
ns
35
100
100
10
10
1.0
150°C
100°C
25°C
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VF, INSTANTANEOUS VOLTAGE (V)
Figure 1. Typical Forward Voltage
1.0
150°C
25°C
100°C
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
VF, INSTANTANEOUS VOLTAGE (V)
Figure 2. Maximum Forward Voltage
www.onsemi.com
2