MBRS3200T3 Datasheet, PDF (2/4 Pages) ON Semiconductor – Surface Mount Schottky Power Rectifier

MBRS3200T3
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Lead (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 2)
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 3)
(I_F = 3.0 A, T_J = 25°C)
(I_F = 4.0 A, T_J = 25°C)
(I_F = 3.0 A, T_J = 150°C)
Maximum Instantaneous Reverse Current (Note 3)
(Rated dc Voltage, T_J = 25°C)
(Rated dc Voltage, T_J = 150°C)
1. Minimum pad size (0.108 × 0.085 inch) for each lead on FR4 board.
2. 1 inch square pad size (1 × 0.5 inch) for each lead on FR4 board.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
Symbol
R_qJL
R_qJA
V_F
I_R
Value
13
62
0.84
0.86
0.59
1.0
5.0
Unit
°C/W
V
mA
mA
100
100
T_C = 100°C
T_C = 150°C
T_C = 25°C
10
10
T_C = 100°C
T_C = 150°C
T_C = 25°C
1
1
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
V_F, INSTANTANEOUS VOLTAGE (V)
Figure 1. Typical Forward Voltage
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
V_F, INSTANTANEOUS VOLTAGE (V)
Figure 2. Maximum Forward Voltage
1.0E−03
1.0E−04
T_C = 150°C
1.0E−05 T_C = 100°C
1.0E−06
1.0E−07
1.0E−01
1.0E−02
1.0E−03
1.0E−04
T_C = 150°C
T_C = 25°C
1.0E−08 _{TC = 25°C}
1.0E−05
1.0E−09
0
1.0E−06
20 40 60 80 100 120 140 160 180 200
0
V_R, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current
20 40 60 80 100 120 140 160 180 200
V_R, REVERSE VOLTAGE (V)
Figure 4. Maximum Reverse Current
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