MBRS260T3G Datasheet, PDF (2/5 Pages) ON Semiconductor – Surface Mount Schottky Power Rectifier

MBRS260T3G, NRVBS260T3G
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated V_R, T_L = 95°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Symbol
V_RRM
V_RWM
V_R
I_O
I_FSM
Value
60
2.0
60
Unit
V
A
A
Storage Temperature Range
T_stg
−55 to +150
°C
Operating Junction Temperature
T_J
−55 to +125
°C
Voltage Rate of Change
(Rated V_R, T_J = 25°C)
dv/dt
10,000
V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Lead (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 2)
1. Mounted with minimum recommended pad size, PC Board FR4.
2. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.
Symbol
R_qJL
R_qJA
Value
24
80
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 3)
(i_F = 1.0 A)
(i_F = 2.0 A)
Maximum Instantaneous Reverse Current (Note 3)
(V_R = 60 V)
3. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%.
Symbol
v_F
I_R
Value
T_J = 25°C
T_J = 125°C
0.51
0.475
0.63
0.55
T_J = 25°C
T_J = 125°C
0.2
20
Unit
V
mA
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