MBRS130T3 Datasheet, PDF (2/3 Pages) ON Semiconductor – Surface Mount Schottky Power Rectifier

MBRS130T3
ELECTRICAL CHARACTERISTICS
Rating
Maximum Instantaneous Forward Voltage (Note 1)
(i_F = 1.0 A, T_J = 25°C)
Maximum Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, T_J = 25°C)
(Rated dc Voltage, T_J = 100°C)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
Symbol
V_F
i_R
Value
Unit
0.6
V
mA
1.0
10
100
1 _{TC = 100°C}
0.7
0.5
0.3
0.2
50
30
20
T_J = 125°C
10
100°C
5
3
2
1
75°C
0.1
0.07
0.05
T_C = 25°C
0.5
0.3
0.2
25°C
0.1
0.05
0.03
0.03
0.02
0.02
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
1.1 ^0.01 0
4
8 12 16 20 24 28 32 36 40
v_F, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
V_R, REVERSE VOLTAGE (VOLTS)
Figure 2. Typical Reverse Current
200
180
NOTE: TYPICAL CAPACITANCE
160
AT 0 V = 160 pF
140
120
100
80
60
40
20
0
04
8 12 16 20 24 28 32 36 40
V_R, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Capacitance
10
9
RATED VOLTAGE APPLIED
5
T_J = 125°C
SQUARE
DC
8
R_qJC = 12°C/W
4
WAVE
T_J = 125°C
π
7
5
6
3
5
4
3
DC
SQUARE WAVE
2
CAPACITANCE
LOAD
10
2
I_{PK = 20}
I_AV
1
1
0
0
30 40 50 60 70 80 90 100 110 120 130
0
1
2
3
4
5
T_C, CASE TEMPERATURE (°C)
Figure 4. Current Derating (Case)
I_F(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 5. Power Dissipation
http://onsemi.com
2