MBRS130LT3_07 Datasheet, PDF (2/6 Pages) ON Semiconductor – Schottky Power Rectifier

MBRS130LT3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V_RRM
30
V
V_RWM
V_R
Average Rectified Forward Current
T_L = 120°C
T_L = 110°C
I_F(AV)
A
1.0
2.0
Non−Repetitive Peak Surge Current
I_FSM
40
A
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Operating Junction Temperature
T_J
−65 to +125
°C
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Thermal Resistance,
Junction−to−Lead
Y_JL
°C/W
12
Thermal Resistance,
Junction−to−Ambient (T_A = 25°C, Min Pad, 1 oz copper)
Junction−to−Ambient (T_A = 25°C, 1” Pad, 1 oz copper)
R_qJA
228.8
71.3
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 1)
(i_F = 1.0 A, T_J = 25°C)
(i_F = 2.0 A, T_J = 25°C)
Maximum Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, T_J = 25°C)
(Rated dc Voltage, T_J = 100°C)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2%.
Symbol
Value
Unit
V_F
V
0.395
0.445
I_R
mA
1.0
10
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