MBRM110L_05 Datasheet, PDF (2/5 Pages) ON Semiconductor – Surface Mount Schottky Power Rectifier

MBRM110L
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (T_L = 115°C, R_qJL = 35°C/W)
Non−Repetitive Peak Surge Current
(Non−Repetitive peak surge current, halfwave, single phase, 60 Hz)
V_RRM
V_RWM
V_R
I_O
I_FSM
10
V
1.0
A
50
A
Storage Temperature
T_stg
−55 to 125
°C
Operating Junction Temperature
T_J
−55 to 125
°C
Voltage Rate of Change (Rated V_R, T_J = 25°C)
dv/dt
10,000
V/ms
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Thermal Resistance, Junction−to−Lead (Anode) (Note 1)
Thermal Resistance, Junction−to−Tab (Cathode) (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 1)
R_tjl
R_tjtab
R_tja
1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 8 and 9.
ELECTRICAL CHARACTERISTICS
35
°C/W
23
277
Maximum Instantaneous Forward Voltage (Note 2)
(I_F = 0.1 A)
(I_F = 1.0 A)
(I_F = 2.0 A)
Maximum Instantaneous Reverse Current (Note 2)
(V_R = 5.0 V)
(V_R = 10 V)
2. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2%.
V_F
T_J = 25°C T_J = 100°C
V
0.280
0.365
0.415
0.175
0.275
0.325
I_R
T_J = 25°C T_J = 100°C mA
0.2
30
0.5
60
10
T_J = 125°C
100°C
75°C
1
25°C
−55°C
10
T_J = 125°C
100°C
75°C
1
0.1
0.1 0.2
0.3
0.4
0.5
0.6
0.7
V_F, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
25°C −55°C
0.1
0.1 0.2
0.3
0.4
0.5
0.6
0.7
V_F, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 2. Maximum Forward Voltage
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