MBRM110L Datasheet, PDF (2/8 Pages) ON Semiconductor – Surface Mount Schottky Power Rectifier

MBRM110L
MAXIMUM RATINGS
Rating
Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (T_L = 115°C, R_qJL = 35°C/W)
Non–Repetitive Peak Surge Current
(Non–Repetitive peak surge current, halfwave, single phase, 60 Hz)
V_RRM
V_RWM
V_R
I_O
I_FSM
Storage Temperature
Operating Junction Temperature
Voltage Rate of Change (Rated V_R, T_J = 25°C)
THERMAL CHARACTERISTICS
T_stg
T_J
dv/dt
Thermal Resistance – Junction–to–Lead (Anode) (Note 1)
Thermal Resistance – Junction–to–Tab (Cathode) (Note 1)
Thermal Resistance – Junction–to–Ambient (Note 1)
ELECTRICAL CHARACTERISTICS
R_tjl
R_tjtab
R_tja
Maximum Instantaneous Forward Voltage (Note 2)
V_F
(I_F = 0.1 A)
(I_F = 1.0 A)
(I_F = 2.0 A)
Maximum Instantaneous Reverse Current (Note 2)
I_R
(V_R = 5.0 V)
(V_R = 10 V)
1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 8 and 9.
2. Pulse Test: Pulse Width ≤ 250 µs, Duty Cycle ≤ 2%.
Value
Unit
10
V
1.0
50
–55 to 125
–55 to 125
10,000
A
A
°C
°C
V/ms
35
°C/W
23
277
T_J = 25°C T_J = 100°C
V
0.280
0.365
0.415
0.175
0.275
0.325
T_J = 25°C T_J = 100°C mA
0.2
30
0.5
60
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