MBRM110E_06 Datasheet, PDF (2/5 Pages) ON Semiconductor – Surface Mount Schottky Power Rectifier

MBRM110E
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (T_L = 100°C)
Non−Repetitive Peak Surge Current
(Non−Repetitive peak surge current, halfwave, single phase, 60 Hz)
V_RRM
V_RWM
V_R
I_O
I_FSM
10
V
1.0
A
50
A
Storage Temperature
T_stg
−55 to +150
°C
Operating Junction Temperature
T_J
−55 to +150
°C
Voltage Rate of Change (Rated V_R, T_J = 25°C)
dv/dt
10,000
V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Thermal Resistance, Junction−to−Lead (Anode) (Note 1)
Thermal Resistance, Junction−to−Tab (Cathode) (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 1)
R_tjl
R_tjtab
R_tja
1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 8 and 9.
ELECTRICAL CHARACTERISTICS
35
°C/W
23
277
Rating
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage (Note 2)
(I_F = 0.1 A)
(I_F = 1.0 A)
(I_F = 2.0 A)
Maximum Instantaneous Reverse Current (Note 2)
(V_R = 5.0 V)
(V_R = 10 V)
2. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2%.
V_F
T_J = 25°C T_J = 100°C
V
V_F
0.455
0.360
V
0.530
0.455
0.595
0.540
I_R
T_J = 25°C T_J = 100°C
mA
0.5
300
1.0
500
10
T_J = 150°C
T_J = 100°C
T_J = 25°C
T_J = -40°C
1.0
10
T_J = 150°C
T_J = 100°C
1.0
T_J = 25°C
0.1
0.2
0.4
0.6
0.8
v_F, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
0.1
0.2
0.4
0.6
0.8
V_F, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 2. Maximum Forward Voltage
http://onsemi.com
2