MBRJ20L60CTG Datasheet, PDF (2/5 Pages) ON Semiconductor – Power Rectifier

MBRJ20L60CTG
MAXIMUM RATINGS (Per Diode Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V_RRM
60
V
V_RWM
V_R
Average Rectified Forward Current
(Rated V_R) T_C = 138°C
(Rated V_R) T_C = 123°C
I_F(AV)
A
Per Diode
10
Per Device
20
Nonrepetitive Peak Surge Current
I_FSM
240
A
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
Operating Junction Temperature (Note 1)
T_J
Storage Temperature
T_stg
ESD Ratings:
Machine Model = C
Human Body Model = 3B
−55 to +150
°C
−65 to +175
°C
> 400
V
> 8000
THERMAL CHARACTERISTICS
Maximum Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
R_qJC
R_qJA
°C/W
3.9
105
Rating
Symbol
Typ
Max
Unit
Maximum Instantaneous Forward Voltage (Note 2)
(I_F = 10 A, T_C = 25°C)
(I_F = 10 A, T_C = 125°C)
(I_F = 20 A, T_C = 25°C)
(I_F = 20 A, T_C = 125°C)
v_F
V
0.53
0.57
0.49
0.54
0.68
0.73
0.64
0.69
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, T_C = 25°C)
(Rated DC Voltage, T_C = 125°C)
i_R
118
380
mA
52
96
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP_D/dT_J < 1/R_qJA.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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