MBRJ10H150CTG Datasheet, PDF (2/5 Pages) ON Semiconductor – Power Rectifier

MBRJ10H150CTG
MAXIMUM RATINGS (Per Diode Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated V_R) T_C = 142°C
(Per Leg)
(Per Device)
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
V_RRM
150
V
V_RWM
V_R
I_F(AV)
5
A
10
I_FSM
150
A
Operating Junction Temperature (Note 1)
Storage Temperature
Voltage Rate of Change (Rated V_R)
ESD Ratings:
Machine Model = C
Human Body Model = 3B
T_J
T_stg
dv/dt
−20 to +150
−65 to +150
10000
> 400
> 8000
°C
°C
V/ms
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP_D/dT_J < 1/R_qJA.
THERMAL CHARACTERISTICS
Maximum Thermal Resistance
Rating
− Junction−to−Case
− Junction−to−Ambient
Symbol
R_qJC
R_qJA
Value
4.3
105
Unit
°C/W
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Rating
Symbol
Typ
Maximum Instantaneous Forward Voltage (Note 2)
v_F
(I_F = 5 A, T_C = 25°C)
0.85
(I_F = 5 A, T_C = 125°C)
0.63
Maximum Instantaneous Reverse Current (Note 2)
i_R
(Rated DC Voltage, T_C = 25°C)
(Rated DC Voltage, T_C = 125°C)
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
Max
Unit
V
0.69
45
mA
20
mA
DEVICE ORDERING INFORMATION
Device Order Number
Package Type
Shipping^†
MBRJ10H150CTG
TO−220FP
(Pb−Free)
50 Units / Rail
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
http://onsemi.com
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