MBRD620CT_10 Datasheet, PDF (2/6 Pages) ON Semiconductor – SWITCHMODE Power Rectifiers

MBRD620CT, MBRD630CT, MBRD640CT, MBRD650CT, MBRD660CT
MAXIMUM RATINGS
Rating
MBRD
Symbol
620CT 630CT 640CT 650CT 660CT
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V_RRM
20
30
40
50
60
V_RWM
V_R
Average Rectified Forward Current
Per Diode
I_F(AV)
3
T_C = 130°C (Rated V_R)
Per Device
6
Peak Repetitive Forward Current, T_C = 130°C
I_FRM
6
(Rated V_R, Square Wave, 20 kHz) Per Diode
Nonrepetitive Peak Surge Current − (Surge applied at rated load
I_FSM
75
conditions halfwave, single phase, 60 Hz)
Peak Repetitive Reverse Surge Current (2 ms, 1 kHz)
Operating Junction Temperature (Note 1)
Storage Temperature
Voltage Rate of Change (Rated V_R)
I_RRM
T_J
T_stg
dv/dt
1
−65 to +175
−65 to +175
10,000
THERMAL CHARACTERISTICS PER DIODE
Rating
Symbol
Value
Maximum Thermal Resistance, Junction−to−Case
R_qJC
6
Maximum Thermal Resistance, Junction−to−Ambient (Note 2)
R_qJA
80
ELECTRICAL CHARACTERISTICS PER DIODE
Maximum Instantaneous Forward Voltage (Note 3)
V_F
i_F = 3 Amps, T_C = 25°C
0.7
i_F = 3 Amps, T_C = 125°C
0.65
i_F = 6 Amps, T_C = 25°C
0.9
i_F = 6 Amps, T_C = 125°C
0.85
Maximum Instantaneous Reverse Current (Note 3)
i_R
(Rated dc Voltage, T_C = 25°C)
0.1
(Rated dc Voltage, T_C = 125°C)
15
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP_D/dT_J < 1/R_qJA.
2. Rating applies when surface mounted on the minimum pad size recommended.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
Unit
V
A
A
A
A
°C
°C
V/ms
Unit
°C/W
°C/W
V
mA
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