MBRD5H100 Datasheet, PDF (2/5 Pages) ON Semiconductor – Switch-mode Schottky Power Rectifier

MBRD5H100, NBRD5H100
MAXIMUM RATINGS
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Rating
Symbol
V_RRM
V_RWM
V_R
Value
100
Unit
V
Average Rectified Forward Current
(Rated V_R) T_C = 171°C
Peak Repetitive Forward Current
(Rated V_R, Square Wave, 20 kHz) T_C = 171°C
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
I_F(AV)
A
5
I_FRM
A
10
I_FSM
A
105
Operating Junction and Storage Temperature Range (Note 1)
T_J, T_stg
−65 to +175
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP_D/dT_J < 1/R_qJA.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance
Junction−to−Case (Note 2)
Junction−to−Ambient (Note 2)
2. When mounted using minimum recommended pad size on FR−4 board.
Symbol
R_qJC
R_qJA
Value
1.6
95.8
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage (Note 3)
(I_F = 5 A, T_J = 25°C)
(I_F = 5 A, T_J = 125°C)
V_F
V
0.71
0.60
Maximum Instantaneous Reverse Current (Note 3)
(Rated dc Voltage, T_J = 125°C)
(Rated dc Voltage, T_J = 25°C)
I_R
4.5
mA
3.5
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%
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