MBRD320_10 Datasheet, PDF (2/6 Pages) ON Semiconductor – SWITCHMODE Power Rectifiers

MBRD320, MBRD330, MBRD340, MBRD350, MBRD360
MAXIMUM RATINGS
Rating
MBRD
Symbol
Unit
320 330 340 350 360
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (T_C = +125°C, Rated V_R)
Peak Repetitive Forward Current, T_C = +125°C
(Rated V_R, Square Wave, 20 kHz)
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
V_RRM
20 30 40 50 60
V
V_RWM
V_R
I_F(AV)
3
A
I_FRM
6
A
I_FSM
75
A
Peak Repetitive Reverse Surge Current (2 ms, 1 kHz)
I_RRM
1
A
Operating Junction Temperature Range (Note 1)
T_J
−65 to +175
°C
Storage Temperature Range
T_stg
−65 to +175
°C
Voltage Rate of Change (Rated V_R)
dv/dt
10,000
V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Rating
Maximum Thermal Resistance, Junction−to−Case
Maximum Thermal Resistance, Junction−to−Ambient (Note 2)
Symbol
R_qJC
R_qJA
Value
6
80
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 3)
i_F = 3 Amps, T_C = +25°C
i_F = 3 Amps, T_C = +125°C
i_F = 6 Amps, T_C = +25°C
i_F = 6 Amps, T_C = +125°C
V_F
V
0.6
0.45
0.7
0.625
Maximum Instantaneous Reverse Current (Note 3)
(Rated dc Voltage, T_C = +25°C)
(Rated dc Voltage, T_C = +125°C)
i_R
mA
0.2
20
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP_D/dT_J < 1/R_qJA.
2. Rating applies when surface mounted on the minimum pad size recommended.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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