MBRB30H60CT-1G_10 Datasheet, PDF (2/9 Pages) ON Semiconductor – SWITCHMODE™ Power Rectifier

MBRB30H60CT−1G, MBR30H60CTG, MBRF30H60CTG, MBRB30H60CTT4G
MAXIMUM RATINGS (Per Diode Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated V_R) T_C = 159°C
Peak Repetitive Forward Current
(Rated V_R, Square Wave, 20 kHz)
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
V_RRM
60
V
V_RWM
V_R
I_F(AV)
15
A
I_FRM
30
A
I_FSM
260
A
Operating Junction Temperature (Note 1)
Storage Temperature
Voltage Rate of Change (Rated V_R)
Controlled Avalanche Energy (see test conditions in Figures 11 and 12)
ESD Ratings: Machine Model = C
Human Body Model = 3B
T_J
T_stg
dv/dt
W_AVAL
−55 to +175
*55 to +175
10,000
350
> 400
> 8000
°C
°C
V/ms
mJ
V
THERMAL CHARACTERISTICS
Maximum Thermal Resistance
(MBRB30H60CT−1G and MBR30H60CTG) − Junction−to−Case
− Junction−to−Ambient
(MBRF30H60CTG)
− Junction−to−Case
(MBRB30H60CTTRG)
− Junction−to−Case
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
R_qJC
R_qJA
R_qJC
R_qJC
°C/W
2.0
70
4.4
1.6
Maximum Instantaneous Forward Voltage (Note 2)
(I_F = 15 A, T_C = 25°C)
(I_F = 15 A, T_C = 125°C)
(I_F = 30 A, T_C = 25°C)
(I_F = 30 A, T_C = 125°C)
v_F
V
0.62
0.56
0.78
0.71
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, T_C = 25°C)
(Rated DC Voltage, T_C = 125°C)
i_R
mA
0.3
45
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP_D/dT_J < 1/R_qJA.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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