English
Language : 

MBRA210ET3 Datasheet, PDF (2/8 Pages) ON Semiconductor – Surface Mount Schottky Power Rectifier
MBRA210ET3
THERMAL CHARACTERISTICS
Characteristic
Symbol
Min Pad
Thermal Resistance - Junction-to-Lead (Note 1)
Thermal Resistance - Junction-to-Ambient (Note 1)
ELECTRICAL CHARACTERISTICS
RθJL
22
RθJA
150
Maximum Instantaneous Forward Voltage (Note 2)
VF
TJ = 25°C
(IF = 0.1 A)
(IF = 1.0 A)
(IF = 2.0 A)
0.405
0.480
0.500
Maximum Instantaneous Reverse Current
IR
TJ = 25°C
(VR = 10 V)
15
(VR = 5.0 V)
50
1. Mounted on a 3″ square FR4 PC Board with min. pads or 1″ square copper heat spreader.
2. Pulse Test: Pulse Width ≤ 250 µs, Duty Cycle ≤ 2%.
100
100
1 Inch Pad
15
81
TJ = 100°C
0.275
0.355
0.385
TJ = 100°C
200
500
Unit
°C/W
V
mA
10
10
100°C
1
1
0.1
125°C
75°C 25°C -40 °C
0.1 0.2
0.3
0.4
0.5
0.6
0.7
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
1.00E-03
1.00E-04
1.00E-05
125°C
100°C
75°C
0.1
125°C
100°C
25°C
0.1 0.2
0.3
0.4
0.5
0.6
0.7
VF, MAXIMUM INSTANTANEOUS FORWARD
VOLTAGE (VOLTS)
Figure 2. Maximum Forward Voltage
1.00E-06
25°C
1.00E-07
0
2
4
6
8
10
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
http://onsemi.com
2