MBRA140T3G Datasheet, PDF (2/5 Pages) EIC discrete Semiconductors – SURFACE MOUNT SURFACE MOUNT

MBRA140T3G, NRVBA140T3G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated V_R, T_C = 95°C)
V_RRM
40
V
V_RWM
V_R
I_O
A
1.0
Peak Repetitive Forward Current
(At Rated V_R, Square Wave, 20 kHz, T_C = 100°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I_FRM
A
2.0
I_FSM
A
30
Storage Temperature
Operating Junction Temperature
Voltage Rate of Change
(Rated V_R, T_J = 25°C)
ESD Ratings:
Machine Model = C
Human Body Model = 3B
T_stg
T_J
dv/dt
−55 to +150
−55 to +125
10,000
> 400
> 8000
°C
°C
V/ms
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Lead (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 1)
1. Mounted on 2″ Square PC Board with 1″ Square Total Pad Size, PC Board FR4.
Symbol
R_qJL
R_qJA
Value
35
86
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
V_F
Maximum Instantaneous Forward Voltage (Note 2)
see Figure 2 for other Values
(I_F = 1.0 A)
(I_F = 2.0 A)
Maximum Instantaneous Reverse Current
see Figure 4 for other Values
I_R
(V_R = 40 V)
(V_R = 20 V)
2. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%.
T_J = 25°C
T_J = 100°C
V
0.55
0.505
0.71
0.74
T_J = 25°C
T_J = 100°C
mA
0.5
10
0.1
4.0
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