MBR40H100WT_10 Datasheet, PDF (2/6 Pages) ON Semiconductor – SWITCHMODE™ Power Rectifier

MBR40H100WT
MAXIMUM RATINGS (Per Diode Leg)
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
T_C = 148°C, per Diode
T_C = 150°C, per Device
Peak Repetitive Forward Current
(Square Wave, 20 kHz) T_C = 144°C
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
Symbol
V_RRM
V_RWM
V_R
I_F(AV)
I_FRM
I_FSM
Value
100
20
40
40
200
Unit
V
A
A
A
Operating Junction Temperature (Note 1)
Storage Temperature
Voltage Rate of Change (Rated V_R)
Controlled Avalanche Energy (see test conditions in Figures 10 and 11)
ESD Ratings: Machine Model = C
Human Body Model = 3B
T_J
T_stg
dv/dt
W_AVAL
+175
°C
*65 to +175
°C
10,000
V/ms
400
mJ
> 400
V
> 8000
THERMAL CHARACTERISTICS
Maximum Thermal Resistance − Junction−to−Case
− Junction−to−Ambient (Socket Mounted)
R_qJC
R_qJA
0.58
°C/W
32
ELECTRICAL CHARACTERISTICS
Characterisitc
Symbol Min Typ Max Unit
Instantaneous Forward Voltage (Note 2)
(I_F = 20 A, T_J = 25°C)
(I_F = 20 A, T_J = 125°C)
(I_F = 40 A, T_J = 25°C)
(I_F = 40 A, T_J = 125°C)
v_F
V
−
0.74 0.80
−
0.61 0.67
−
0.85 0.90
−
0.72 0.76
Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, T_J = 125°C)
(Rated dc Voltage, T_J = 25°C)
i_R
mA
−
2.0
10
− 0.0012 0.01
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP_D/dT_J < 1/R_qJA.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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