MBR120VLSFT1 Datasheet, PDF (2/6 Pages) ON Semiconductor – Surface Mount Schottky Power Rectifier

MBR120VLSFT1
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance - Junction-to-Lead (Note 1)
Thermal Resistance - Junction-to-Lead (Note 2)
Thermal Resistance - Junction-to-Ambient (Note 1)
Thermal Resistance - Junction-to-Ambient (Note 2)
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 3)
(I_F = 0.1 A)
(I_F = 0.5 A)
(I_F = 1.0 A)
Maximum Instantaneous Reverse Current (Note 3)
(Rated dc Voltage)
1. Mounted with minimum recommended pad size, PC Board FR4.
2. Mounted with 1 in. copper pad (Cu area 700 mm²).
3. Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2%.
Symbol
R_tjl
R_tjl
R_tja
R_tja
Value
26
21
325
82
Unit
°C/W
Symbol T_J = 255C T_J = 855C Unit
V_F
V
0.275
0.205
0.315
0.270
0.340
0.300
I_R
0.60
mA
15
10
10
T_J = 125°C
T_J = 85°C
1
T_J = 25°C
T_J = 125°C
1
T_J = 85°C
0.1
0
T_J = -55°C
0.1
0.2
0.3
0.4
0.5
0.6
V_F, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
T_J = 25°C
0.1
0.1
0.2
0.3
0.4
0.5
V_F, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE
(VOLTS)
Figure 2. Maximum Forward Voltage
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