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M1MA151WKT1_12 Datasheet, PDF (2/4 Pages) ON Semiconductor – Common Cathode Silicon Dual Switching Diodes
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M1MA151WKT1, M1MA152WKT1, SM1MA151WKT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
Condition
Min
Max
Reverse Voltage Leakage Current
M1MA151WKT1, SM1MA151WKT1G
M1MA152WKT1
Forward Voltage
Reverse Breakdown Voltage
M1MA151WKT1, SM1MA151WKT1G
M1MA152WKT1
IR
VR = 35 V
−
0.1
VR = 75 V
−
0.1
VF
IF = 100 mA
−
1.2
VR
IR = 100 mA
40
−
80
−
Diode Capacitance
Reverse Recovery Time (Figure 1)
2. trr Test Circuit
CD
VR = 0, f = 1.0 MHz
−
2.0
trr
IF = 10 mA, VR = 6.0 V,
−
3.0
(Note 2) RL = 100 W, Irr = 0.1 IR
Unit
mAdc
Vdc
Vdc
pF
ns
RECOVERY TIME EQUIVALENT TEST CIRCUIT
INPUT PULSE
tr
tp
RL
A
t
10%
90%
VR
tp = 2 ms
tr = 0.35 ns
Figure 1. Reverse Recovery Time Equivalent Test Circuit
OUTPUT PULSE
trr
IF
t
Irr = 0.1 IR
IF = 10 mA
VR = 6 V
RL = 100 W
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