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M1MA151WKT1 Datasheet, PDF (2/3 Pages) Motorola, Inc – Common Cathode Silicon Dual Switching Diodes
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M1MA151WKT1, M1MA152WKT1
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Reverse Voltage Leakage Current
M1MA151WKT1
M1MA152WKT1
Forward Voltage
Reverse Breakdown Voltage
M1MA151WKT1
M1MA152WKT1
Diode Capacitance
Reverse Recovery Time (Figure 1)
2. trr Test Circuit
Symbol
IR
VF
VR
CD
trr
(Note 2)
Condition
Min
VR = 35 V
−
VR = 75 V
IF = 100 mA
−
IR = 100 mA
40
80
VR = 0, f = 1.0 MHz
−
IF = 10 mA, VR = 6.0 V,
−
RL = 100 W, Irr = 0.1 IR
Max Unit
0.1
mAdc
1.2
Vdc
−
Vdc
2.0
pF
3.0
ns
RECOVERY TIME EQUIVALENT TEST CIRCUIT
INPUT PULSE
tr
tp
RL
A
t
10%
90%
VR
tp = 2 ms
tr = 0.35 ns
Figure 1. Reverse Recovery Time Equivalent Test Circuit
OUTPUT PULSE
trr
IF
t
Irr = 0.1 IR
IF = 10 mA
VR = 6 V
RL = 100 W
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