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M1MA151WK Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – Surface Mount Switching Diode
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M1MA151WK, M1MA152WK
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
Condition
Min
Reverse Voltage Leakage Current
M1MA151WK
M1MA152WK
Forward Voltage
Reverse Breakdown Voltage
M1MA151WK
M1MA152WK
IR
VR = 35 V
−
VR = 75 V
−
VF
IF = 100 mA
−
VR
IR = 100 mA
40
80
Diode Capacitance
Reverse Recovery Time (Figure 1)
2. trr Test Circuit
CD
VR = 0, f = 1.0 MHz
−
trr
IF = 10 mA, VR = 6.0 V,
−
(Note 2) RL = 100 W, Irr = 0.1 IR
Max
Unit
0.1
mAdc
0.1
1.2
Vdc
−
Vdc
−
2.0
pF
3.0
ns
RECOVERY TIME EQUIVALENT TEST CIRCUIT
INPUT PULSE
tr
tp
RL
A
t
10%
90%
VR
tp = 2 ms
tr = 0.35 ns
Figure 1. Reverse Recovery Time Equivalent Test Circuit
OUTPUT PULSE
trr
IF
t
Irr = 0.1 IR
IF = 10 mA
VR = 6 V
RL = 100 W
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