LV8062FA Datasheet, PDF (2/7 Pages) ON Semiconductor – Single-Phase Full-Wave Driver

LV8062FA
Recommended Operating Conditions at Ta = 25°C
Parameter
Symbol
Conditions
Supply voltage
Hall input common-mode input voltage
range
VCC opg
VCC min
VICM
Active at all circuit
Start-up with PWM=H
Ratings
Unit
2.5 to 6.0
V
2.2 to 6.0
V
0.3 to VCC-1.5
V
Electrical Characteristics at Ta = 25°C, VCC = 5V
Parameter
Circuit current
HB bias voltage
Hall input bias current
Symbol
ICC
ICCO
VHB
IHIN
Conditions
Active
Stand-by
IHB = 5mA
min
0.9
Output On voltage
VO
IO = 250mA, source + sink
Hall amplifier output offset voltage
VINOFS
-10
Hall amplifier voltage gain
GH
39
PWM pin input Low level
VPWML
0
PWM pin input High level
VPWMH
2.5
PWM input smallest pulse width
TPWM
Design guarantee *
FG output low-level voltag
VFG
IFG = 3mA
FG output leakage current
IFGL
VFG = 7V
FG comparator hysteresis width
ΔVHYS
±5
Output on time in Lock-detection
TACT
0.45
Output off time in Lock-detection
TDET
4.5
Output on/off ratio in Lock-detection
TRTO
TRTO=TDET/TACT
8
Thermal shutdown operating temperature TSD
Design guarantee *
Thermal shutdown hysteresis width
ΔTSD
Design guarantee *
* Design guarantee: Indicates a design target value. These parameters are not tested in the independent IC.
Ratings
typ
1.5
1.05
0.25
44
5
±15
0.6
6
10
180
40
Unit
max
3.0
mA
200
μA
1.2
V
1
μA
0.35
V
10
mV
47
dB
0.7
V
VCC
V
μs
0.3
V
10
μA
±20
mV
0.75 sec
7.5 sec
11
°C
°C
Pin Assignment
IN1 1
HB 2
IN2 3
SGND 4
OUT1 5
10 PWM
9 FG
8 VCC
7 OUT2
6 PGND
Top view
No.A2072-2/7