LM2575D2T-005 Datasheet, PDF (2/28 Pages) ON Semiconductor – 1.0 A, Adjustable Output Voltage, Step-Down

LM2575, NCV2575
Typical Application (Fixed Output Voltage Versions)
7.0 V - 40 V
+V_in
Unregulated
DC Input
1
C_in
100 mF
Feedback
LM2575
4
L1
330 mH
Output
2
3 GND 5 ON/OFF
D1
1N5819
C_out
330 mF
5.0 V Regulated
Output 1.0 A Load
Unregulated
DC Input
C_in
+V_in
1
4
Feedback
Representative Block Diagram and Typical Application
3.1 V Internal
Regulator
ON/OFF
R2 Fixed Gain
Error Amplifier _Comparator
R1
1.0 k ^Freq
Shift
18 kHz
1.235 V
Band-Gap
Reference
52 kHz
Oscillator
Current
Limit
Latch
Reset
Driver
1.0 Amp
Switch
Thermal
Shutdown
ON/OFF
5
Output
R2
Voltage Versions
(W)
3.3 V
1.7 k
5.0 V
3.1 k
12 V
8.84 k
15 V
11.3 k
For adjustable version
R1 = open, R2 = 0 W
Output
2
GND
3
L1
D1
Regulated
Output
V_out
C_out
Load
This device contains 162 active transistors.
Figure 1. Block Diagram and Typical Application
ABSOLUTE MAXIMUM RATINGS (Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.)
Rating
Symbol
Value
Unit
Maximum Supply Voltage
ON/OFF Pin Input Voltage
Output Voltage to Ground (Steady−State)
V_in
45
V
−
−0.3 V ≤ V ≤ +V_in
V
−
−1.0
V
Power Dissipation
Case 314B and 314D (TO−220, 5−Lead)
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Case 936A (D²PAK)
Thermal Resistance, Junction−to−Ambient (Figure 34)
Thermal Resistance, Junction−to−Case
Storage Temperature Range
Minimum ESD Rating (Human Body Model: C = 100 pF, R = 1.5 kW)
P_D
R_qJA
R_qJC
P_D
R_qJA
R_qJC
T_stg
−
Internally Limited
65
5.0
Internally Limited
70
5.0
−65 to +150
2.0
W
°C/W
°C/W
W
°C/W
°C/W
°C
kV
Lead Temperature (Soldering, 10 s)
−
260
°C
Maximum Junction Temperature
T_J
150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
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