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J110 Datasheet, PDF (2/4 Pages) InterFET Corporation – N-Channel Silicon Junction Field-Effect Transistor | |||
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J110
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
STATIC CHARACTERISTICS
Gate âSource Breakdown Voltage
(IG = â1.0 mAdc)
Gate Reverse Current
(VGS = â15 Vdc, VDS = 0)
(VGS = â15 Vdc, VDS = 0, TA = 100°C)
GateâSource Cutoff Voltage
(VDS = 5.0 Vdc, ID = 1.0 mAdc)
Drain Source OnâResistance
(VDS v 0.1 V, VGS = 0 V)
ZeroâGateâVoltage Drain Current (Note 1)
(VDS = 15 Vdc)
DYNAMIC CHARACTERISTICS
DrainâGate and SourceâGate OnâCapacitance
(VDS = VGS = 0, f = 1.0 MHz)
DrainâGate OffâCapacitance
SourceâGate OffâCapacitance
1. Pulse Width = 300 ms, Duty Cycle = 3.0%.
(VGS = â10 Vdc, f = 1.0 MHz)
(VGS = â10 Vdc, f = 1.0 MHz)
Symbol
V(BR)GSS
IGSS
VGS(off)
RDS(on)
IDSS
Cdg(on)
+
Csg(on)
Cdg(off)
Csg(off)
Min
â25
â
â
â0.5
â
10
â
Max
â
â 3.0
â200
â4.0
18
â
85
Unit
Vdc
nAdc
Vdc
W
mAdc
pF
â
15
pF
â
15
pF
100
100
80
80
60
VDS = 0 V
5V
40
10 V
20
0
0
â4
â8
â12
â16
â20
VGS, GATEâSOURCE VOLTAGE (VOLTS)
Figure 1. Common Source Input Capacitance
versus GateâSource Voltage
16
12
RDS(on): VDS ⤠0.1 V
RDS(on): VGS = 0 V
8
4
VGS(off): VDS = 5 V
VGS(off): ID = 1.0 mA
0
0 â1 â2 â3 â4 â5 â6 â7 â8
VGS(off), GATEâSOURCE CUTOFF VOLTAGE (VOLTS)
Figure 3. OnâResistance versus GateâSource
Cutoff Voltage
60
40
VDS = 0 V
20
5V
0
10 V
0
â4
â8
â12
â16
â20
VGS, GATEâSOURCE VOLTAGE (VOLTS)
Figure 2. Common Source Reverse Feedback
Capacitance versus GateâSource Voltage
100
90
80
70
60
50
40
30
20
10
0
0
VGS = 0 V
â0.25 V
â0.5 V
â0.75 V
â1 V
â1.25 V
2 4 6 8 10 12 14 16 18 20
VDS, DRAINâSOURCE VOLTAGE (VOLTS)
Figure 4. Output Characteristic
VGS(off) = â2.0 V
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