HBL1010 Datasheet, PDF (2/3 Pages) ON Semiconductor – 1-Channel ESD Protector

HBL1010
SPECIFICATIONS
Table 2. OPERATING CONDITIONS
Parameter
Operating Temperature Range
Storage Temperature Range
Rating
−40 to +130
−55 to +130
Units
°C
°C
Table 3. ELECTRICAL OPERATING CHARACTERISTICS
Symbol
Parameter
Conditions
Min Typ Max Units
I_LEAK
Leakage Current
V = ±4 V, T = 25°C
V = ±7 V, T = 25°C
±0.1 ±1
mA
±10 ±100 mA
V_BD
Breakdown Voltage
T = 25°C
at ±20.0 mA
±7.3 ±8 ±8.9 V
V_ESD
ESD Voltage Rating
T = 25°C
±8
kV
Contact Discharge per Human Body Model,
(Note 1)
MIL−STD−883 (Method 3015)
C_T
Capacitance
Temp Coefficient of BV
T = 25°C
20 mA
18
pF
1.0
mV/K
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Per the standard, 3 positive and 3 negative strikes are applied, one second apart.
MECHANICAL DETAILS
Table 4. MECHANICAL SPECIFICATIONS (Note 2)
Symbol
Value
Unit
Composition
Silicon Wafer,
P+ doped
Length (Sawn)
500
mm
Width (Sawn)
200
mm
Thickness
4
mils
Top Pad Length
150
mm
Top Pad Width
140
mm
Top Pad Spacing
100
mm
Top Pad Composition
AuSn (gold−tin)
Top Pad Thickness
24 ± 10
mm
Back Metal (Underside)
None (silicon
substrate)
2. Dimensions are typical values if tolerances are not specified.
50 um
150 um
200 um
140 um
30 um
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