HBL1009 Datasheet, PDF (2/3 Pages) –

HBL1009
SPECIFICATIONS
Table 2. OPERATING CONDITIONS
Parameter
Operating Temperature Range
Storage Temperature Range
Rating
−40 to +130
−55 to +130
Units
°C
°C
Table 3. ELECTRICAL OPERATING CHARACTERISTICS
Symbol
Parameter
Conditions
I_LEAK
Leakage Current
V = ±4 V, T = 25°C
V = ±7 V, T = 25°C
V_BD
Breakdown Voltage
T = 25°C
at ±20.0 mA
V_ESD
ESD Voltage Rating
Contact Discharge per Human Body Model,
MIL−STD−883 (Method 3015)
(Note 1)
C_T
Capacitance
Temp Coefficient of BV
20 mA
1. Per the standard, 3 positive and 3 negative strikes are applied, one second apart.
Min Typ Max Units
±0.1 ±1
mA
±10 ±100 mA
±7.3 ±8 ±8.9 V
±8
kV
50
pF
1.0
mV/K
MECHANICAL DETAILS
Table 4. MECHANICAL SPECIFICATIONS (Note 2)
Symbol
Value
Unit
Composition
Silicon Wafer,
P+ doped
Length (Sawn)
466
mm
Width (Sawn)
446
mm
Thickness
4
mils
Top Pad Length
350
mm
Top Pad Width
111
mm
Top Pad Spacing
109
mm
Top Pad Composition
AuSn (gold−tin)
Top Pad Thickness
24 ± 10
mm
Back Metal (Underside)
None (silicon
substrate)
2. Dimensions are typical values if tolerances are not specified.
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